Cosmic ray soft error rates of 16-Mb DRAM memory chips
Manufactured 16-Mb DRAM memory chips use three different cell technologies for bit storage: stacked capacitors, trenches with internal charge, and trenches with external charge. We have measured the soft fail probability of 26 different 16-Mb chips produced by nine vendors to evaluate whether the di...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1998-02, Vol.33 (2), p.246-252 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 33 |
| creator | Ziegler, J.F. Nelson, M.E. Shell, J.D. Peterson, R.J. Gelderloos, C.J. Muhlfeld, H.P. Montrose, C.J. |
| description | Manufactured 16-Mb DRAM memory chips use three different cell technologies for bit storage: stacked capacitors, trenches with internal charge, and trenches with external charge. We have measured the soft fail probability of 26 different 16-Mb chips produced by nine vendors to evaluate whether the different cell technologies have an impact on the chip soft error rate. This testing involved irradiation with neutrons, protons, and pions, the principle hadrons of terrestrial cosmic rays. The results show clear differences in soft-fail sensitivity, which appears to be related to the cell structure. |
| doi_str_mv | 10.1109/4.658626 |
| format | Article |
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We have measured the soft fail probability of 26 different 16-Mb chips produced by nine vendors to evaluate whether the different cell technologies have an impact on the chip soft error rate. This testing involved irradiation with neutrons, protons, and pions, the principle hadrons of terrestrial cosmic rays. 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The results show clear differences in soft-fail sensitivity, which appears to be related to the cell structure.</description><subject>Capacitors</subject><subject>Circuit testing</subject><subject>Dielectric substrates</subject><subject>Electrodes</subject><subject>Error analysis</subject><subject>FETs</subject><subject>Manufacturing</subject><subject>Neutrons</subject><subject>Protons</subject><subject>Semiconductor device measurement</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo90M1LxDAQBfAgCq6r4NlTTuKl6yRNk_S4rJ-wiyAK3kKaTrDSmpp0D_3vrXTxNDzmxzs8Qi4ZrBiD8lasZKEll0dkwYpCZ0zlH8dkAcB0VnKAU3KW0tcUhdBsQeQmpK5xNNqRpuAHijGGOMUBEw2eMpntKnr3ut7RDrsQR-o-mz6dkxNv24QXh7sk7w_3b5unbPvy-LxZbzPHVTFkqgLwHC2TFVMcvK2h4kpawWspSwvAUUtvS10yqCXnrBK5tdzp2jpnqzxfkuu5t4_hZ49pMF2THLat_cawT4ZrLkqp1ARvZuhiSCmiN31sOhtHw8D8DWOEmYeZ6NVMG0T8Z4fnL3Y3W3U</recordid><startdate>199802</startdate><enddate>199802</enddate><creator>Ziegler, J.F.</creator><creator>Nelson, M.E.</creator><creator>Shell, J.D.</creator><creator>Peterson, R.J.</creator><creator>Gelderloos, C.J.</creator><creator>Muhlfeld, H.P.</creator><creator>Montrose, C.J.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>199802</creationdate><title>Cosmic ray soft error rates of 16-Mb DRAM memory chips</title><author>Ziegler, J.F. ; Nelson, M.E. ; Shell, J.D. ; Peterson, R.J. ; Gelderloos, C.J. ; Muhlfeld, H.P. ; Montrose, C.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c275t-7b00f2ea16b1720fad0b276a42d669a002e86fa98910d6221b43aa2c8daccab33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Capacitors</topic><topic>Circuit testing</topic><topic>Dielectric substrates</topic><topic>Electrodes</topic><topic>Error analysis</topic><topic>FETs</topic><topic>Manufacturing</topic><topic>Neutrons</topic><topic>Protons</topic><topic>Semiconductor device measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ziegler, J.F.</creatorcontrib><creatorcontrib>Nelson, M.E.</creatorcontrib><creatorcontrib>Shell, J.D.</creatorcontrib><creatorcontrib>Peterson, R.J.</creatorcontrib><creatorcontrib>Gelderloos, C.J.</creatorcontrib><creatorcontrib>Muhlfeld, H.P.</creatorcontrib><creatorcontrib>Montrose, C.J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ziegler, J.F.</au><au>Nelson, M.E.</au><au>Shell, J.D.</au><au>Peterson, R.J.</au><au>Gelderloos, C.J.</au><au>Muhlfeld, H.P.</au><au>Montrose, C.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cosmic ray soft error rates of 16-Mb DRAM memory chips</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1998-02</date><risdate>1998</risdate><volume>33</volume><issue>2</issue><spage>246</spage><epage>252</epage><pages>246-252</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>Manufactured 16-Mb DRAM memory chips use three different cell technologies for bit storage: stacked capacitors, trenches with internal charge, and trenches with external charge. 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| ispartof | IEEE journal of solid-state circuits, 1998-02, Vol.33 (2), p.246-252 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_4_658626 |
| source | IEEE Electronic Library (IEL) |
| subjects | Capacitors Circuit testing Dielectric substrates Electrodes Error analysis FETs Manufacturing Neutrons Protons Semiconductor device measurement |
| title | Cosmic ray soft error rates of 16-Mb DRAM memory chips |
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