A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors
A compact wideband amplifier (or gain block) designed around a Darlington pair of GaAs/GaAlAs heterojunction bipolar transistors (HBTs) is discussed. This circuit has been fabricated by an ion-implanted process with a transistor f/sub t/ of 40 GHz. Two variants of the circuit gave either a 8.5-dB ga...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1989-06, Vol.24 (3), p.686-689 |
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| container_end_page | 689 |
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| container_issue | 3 |
| container_start_page | 686 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 24 |
| creator | Topham, P.J. Long, A.P. Saul, P.H. Parton, J.G. Hollis, B.A. Hiams, N.A. Goodfellow, R.C. |
| description | A compact wideband amplifier (or gain block) designed around a Darlington pair of GaAs/GaAlAs heterojunction bipolar transistors (HBTs) is discussed. This circuit has been fabricated by an ion-implanted process with a transistor f/sub t/ of 40 GHz. Two variants of the circuit gave either a 8.5-dB gain with a DC-to-5-GHz 3-dB bandwidth or a 13-dB gain with a DC-to-3-GHz bandwidth. These amplifiers gave 11.8- and 18.3-dBm output, respectively, at 1-dB gain compression.< > |
| doi_str_mv | 10.1109/4.32026 |
| format | Article |
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This circuit has been fabricated by an ion-implanted process with a transistor f/sub t/ of 40 GHz. Two variants of the circuit gave either a 8.5-dB gain with a DC-to-5-GHz 3-dB bandwidth or a 13-dB gain with a DC-to-3-GHz bandwidth. 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This circuit has been fabricated by an ion-implanted process with a transistor f/sub t/ of 40 GHz. Two variants of the circuit gave either a 8.5-dB gain with a DC-to-5-GHz 3-dB bandwidth or a 13-dB gain with a DC-to-3-GHz bandwidth. These amplifiers gave 11.8- and 18.3-dBm output, respectively, at 1-dB gain compression.< ></description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Bipolar transistors</subject><subject>Broadband amplifiers</subject><subject>Circuit properties</subject><subject>Circuit testing</subject><subject>Digital integrated circuits</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Microwave circuits</subject><subject>Microwave devices</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqN0MFLwzAUBvAgCs4pnr31op66vSRtmhzL0CkOvCh4K69pqhldU5P24H9vZ4deveQR3o8P3kfIJYUFpaCWyYIzYOKIzGiayphm_O2YzACojBUDOCVnIWzHb5JIOiNPeVR6h1VcYltFuOsaW1vjoyHY9j1aYx6W49PkIfowvfFuO7S6t66NStu5Bn3Ue2yDDb3z4Zyc1NgEc3GYc_J6f_eyeog3z-vHVb6JNee8j7XRIJnCJC21qjSVlFd1yQAzYVQKHEouQImKYc2RIzCuRZKCriolJDLO5-Rmyu28-xxM6IudDdo0DbbGDaFgUmYqU_APOLZD-R7eTlB7F4I3ddF5u0P_VVAo9q0WSfHT6iivD5EYNDb1eL224Y-rjIEQanRXk7PGmN_1lPENHRx9vw</recordid><startdate>19890601</startdate><enddate>19890601</enddate><creator>Topham, P.J.</creator><creator>Long, A.P.</creator><creator>Saul, P.H.</creator><creator>Parton, J.G.</creator><creator>Hollis, B.A.</creator><creator>Hiams, N.A.</creator><creator>Goodfellow, R.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19890601</creationdate><title>A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors</title><author>Topham, P.J. ; Long, A.P. ; Saul, P.H. ; Parton, J.G. ; Hollis, B.A. ; Hiams, N.A. ; Goodfellow, R.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-cec0829a45bc9dc1813dfb20a76e95030b36096d2af3a3a023c6450cdd968a233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Bipolar transistors</topic><topic>Broadband amplifiers</topic><topic>Circuit properties</topic><topic>Circuit testing</topic><topic>Digital integrated circuits</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Microwave circuits</topic><topic>Microwave devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Topham, P.J.</creatorcontrib><creatorcontrib>Long, A.P.</creatorcontrib><creatorcontrib>Saul, P.H.</creatorcontrib><creatorcontrib>Parton, J.G.</creatorcontrib><creatorcontrib>Hollis, B.A.</creatorcontrib><creatorcontrib>Hiams, N.A.</creatorcontrib><creatorcontrib>Goodfellow, R.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Topham, P.J.</au><au>Long, A.P.</au><au>Saul, P.H.</au><au>Parton, J.G.</au><au>Hollis, B.A.</au><au>Hiams, N.A.</au><au>Goodfellow, R.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1989-06-01</date><risdate>1989</risdate><volume>24</volume><issue>3</issue><spage>686</spage><epage>689</epage><pages>686-689</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A compact wideband amplifier (or gain block) designed around a Darlington pair of GaAs/GaAlAs heterojunction bipolar transistors (HBTs) is discussed. This circuit has been fabricated by an ion-implanted process with a transistor f/sub t/ of 40 GHz. Two variants of the circuit gave either a 8.5-dB gain with a DC-to-5-GHz 3-dB bandwidth or a 13-dB gain with a DC-to-3-GHz bandwidth. These amplifiers gave 11.8- and 18.3-dBm output, respectively, at 1-dB gain compression.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/4.32026</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 1989-06, Vol.24 (3), p.686-689 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_4_32026 |
| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Bandwidth Bipolar transistors Broadband amplifiers Circuit properties Circuit testing Digital integrated circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Fabrication Gallium arsenide Heterojunction bipolar transistors Microwave circuits Microwave devices |
| title | A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors |
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