Calculation of contact currents in device simulation
The authors present an accurate new method for the calculation of the contact currents in a device simulation program which is applicable to arbitrarily shaped device geometries. The method is based on the evaluation of a volume integral of the calculated current densities over the whole device area...
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| Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 1992-01, Vol.11 (1), p.128-136 |
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| container_end_page | 136 |
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| container_issue | 1 |
| container_start_page | 128 |
| container_title | IEEE transactions on computer-aided design of integrated circuits and systems |
| container_volume | 11 |
| creator | Nanz, G. Dickinger, P. Selberherr, S. |
| description | The authors present an accurate new method for the calculation of the contact currents in a device simulation program which is applicable to arbitrarily shaped device geometries. The method is based on the evaluation of a volume integral of the calculated current densities over the whole device area with a suitably chosen weight function. Different types of weight functions are discussed and compared with the commonly used line integral along the contact. The results are illustrated by three examples: an I/sup 2/L memory cell, an MOS transistor, and a resistor with a reverse-biased diode.< > |
| doi_str_mv | 10.1109/43.108625 |
| format | Article |
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The method is based on the evaluation of a volume integral of the calculated current densities over the whole device area with a suitably chosen weight function. Different types of weight functions are discussed and compared with the commonly used line integral along the contact. The results are illustrated by three examples: an I/sup 2/L memory cell, an MOS transistor, and a resistor with a reverse-biased diode.< ></description><subject>Applied sciences</subject><subject>Boundary conditions</subject><subject>Current density</subject><subject>Differential equations</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Geometry</subject><subject>Integral equations</subject><subject>Interfaces</subject><subject>Laplace equations</subject><subject>MOSFETs</subject><subject>Resistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISSN: 0278-0070 |
| ispartof | IEEE transactions on computer-aided design of integrated circuits and systems, 1992-01, Vol.11 (1), p.128-136 |
| issn | 0278-0070 1937-4151 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_43_108625 |
| source | IEEE/IET Electronic Library (IEL) |
| subjects | Applied sciences Boundary conditions Current density Differential equations Diodes Electronics Exact sciences and technology Geometry Integral equations Interfaces Laplace equations MOSFETs Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Senior members |
| title | Calculation of contact currents in device simulation |
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