The effect of high compressive strain on the operation of AlGaInP quantum-well lasers

In this paper we describe the properties of Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.52/In/sub 0.48/P strained quantum-well (QW) lasers at compressive strains of greater than 1%. Structures containing single 100-/spl Aring/ Ga/sub x/In/sub 1-x/P QW's of different compositions have bee...

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Veröffentlicht in:	IEEE journal of quantum electronics 1998-09, Vol.34 (9), p.1652-1659
Hauptverfasser:	Mogensen, P.C., Hall, S.A., Smowton, P.M., Bangert, U., Blood, P., Dawson, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Beam characteristics: profile, intensity, and power spatial pattern formation Capacitive sensors Chemical lasers Electron optics Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser modes Laser optical systems: design and operation Laser theory Lasers Optical losses Optical microscopy Optics Physics Quantum well lasers Semiconductor lasers laser diodes Strain measurement Threshold current
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