Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion
The control of quantum well shapes in GaAs/AlGaAs material after growth has been investigated both theoretically and experimentally. Double quantum well samples capped either by SiO/sub 2/ or fluorides of the group IIA elements were annealed, and energy gap shifts were measured by photoluminescence....
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| Veröffentlicht in: | IEEE journal of quantum electronics 1994-05, Vol.30 (5), p.1189-1195 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Gontijo, I. Krauss, T. Marsh, J.H. De La Rue, R.M. |
| description | The control of quantum well shapes in GaAs/AlGaAs material after growth has been investigated both theoretically and experimentally. Double quantum well samples capped either by SiO/sub 2/ or fluorides of the group IIA elements were annealed, and energy gap shifts were measured by photoluminescence. These experimental energy shifts were compared to a theoretical model to obtain the diffusion coefficient of aluminum into the quantum wells. Fluorides were found to inhibit the intermixing process almost completely, whereas SiO/sub 2/ is known to enhance it. The aluminum diffusion coefficients for samples annealed at 920/spl deg/C for 30 s are 4.0/spl times/10/sup -17/ cm/sup 2//s and 2.1/spl times/10/sup -15/ cm/sup 2//s for SrF/sub 2/ and SiO/sub 2/ caps, respectively. The activation energies found were 4.09 and 6.40 eV for the same two caps.< > |
| doi_str_mv | 10.1109/3.303680 |
| format | Article |
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Double quantum well samples capped either by SiO/sub 2/ or fluorides of the group IIA elements were annealed, and energy gap shifts were measured by photoluminescence. These experimental energy shifts were compared to a theoretical model to obtain the diffusion coefficient of aluminum into the quantum wells. Fluorides were found to inhibit the intermixing process almost completely, whereas SiO/sub 2/ is known to enhance it. The aluminum diffusion coefficients for samples annealed at 920/spl deg/C for 30 s are 4.0/spl times/10/sup -17/ cm/sup 2//s and 2.1/spl times/10/sup -15/ cm/sup 2//s for SrF/sub 2/ and SiO/sub 2/ caps, respectively. 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Double quantum well samples capped either by SiO/sub 2/ or fluorides of the group IIA elements were annealed, and energy gap shifts were measured by photoluminescence. These experimental energy shifts were compared to a theoretical model to obtain the diffusion coefficient of aluminum into the quantum wells. Fluorides were found to inhibit the intermixing process almost completely, whereas SiO/sub 2/ is known to enhance it. The aluminum diffusion coefficients for samples annealed at 920/spl deg/C for 30 s are 4.0/spl times/10/sup -17/ cm/sup 2//s and 2.1/spl times/10/sup -15/ cm/sup 2//s for SrF/sub 2/ and SiO/sub 2/ caps, respectively. The activation energies found were 4.09 and 6.40 eV for the same two caps.< ></description><subject>Aluminum</subject><subject>Annealing</subject><subject>Chemicals</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion; interface formation</subject><subject>Energy measurement</subject><subject>Energy states</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Photoluminescence</subject><subject>Photonic band gap</subject><subject>Physics</subject><subject>Quantum mechanics</subject><subject>Shape control</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqN0UFLwzAUB_AgCs4pePaUg4iXbklf06bHMXQKAz3s4K2k6YurtM2WtI5-ezsqetTT4_F-_Hm8R8g1ZzPOWTqHGTCIJTshEy6EDHjC4ZRMGOMySHmanJML7z-GNookm5C3V-vbd2cP7ZZq27TOVtQaulILP19Ux0L3nWrarqYHrCrqt2qHnuY9Letd58q2D4xDpJ9Kq0b3tCiN6Xxpm0tyZlTl8eq7Tsnm8WGzfArWL6vn5WId6AjCNkjCMCkKlDLlkmMKkdA5GAgVl5CwRKPOmYhygyIPURQs0qCETLQGVApDmJK7MXbn7L5D32Z16fWwqWrQdj4LpRTAEvYPKADiCP6GseBxyo_wfoTaWe8dmmznylq5PuMsO_4ig2z8xUBvvzOV16oybrhV6X88gGBCRAO7GVmJiL_TMeMLLeSQpA</recordid><startdate>19940501</startdate><enddate>19940501</enddate><creator>Gontijo, I.</creator><creator>Krauss, T.</creator><creator>Marsh, J.H.</creator><creator>De La Rue, R.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7SP</scope><scope>7QF</scope><scope>8BQ</scope></search><sort><creationdate>19940501</creationdate><title>Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion</title><author>Gontijo, I. ; Krauss, T. ; Marsh, J.H. ; De La Rue, R.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c432t-7227dde889181e9345cb3f32a183707cecb054bfe5b2e5d04c3a587cc3eaae23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Aluminum</topic><topic>Annealing</topic><topic>Chemicals</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Diffusion; interface formation</topic><topic>Energy measurement</topic><topic>Energy states</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Photoluminescence</topic><topic>Photonic band gap</topic><topic>Physics</topic><topic>Quantum mechanics</topic><topic>Shape control</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gontijo, I.</creatorcontrib><creatorcontrib>Krauss, T.</creatorcontrib><creatorcontrib>Marsh, J.H.</creatorcontrib><creatorcontrib>De La Rue, R.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gontijo, I.</au><au>Krauss, T.</au><au>Marsh, J.H.</au><au>De La Rue, R.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1994-05-01</date><risdate>1994</risdate><volume>30</volume><issue>5</issue><spage>1189</spage><epage>1195</epage><pages>1189-1195</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>The control of quantum well shapes in GaAs/AlGaAs material after growth has been investigated both theoretically and experimentally. Double quantum well samples capped either by SiO/sub 2/ or fluorides of the group IIA elements were annealed, and energy gap shifts were measured by photoluminescence. These experimental energy shifts were compared to a theoretical model to obtain the diffusion coefficient of aluminum into the quantum wells. Fluorides were found to inhibit the intermixing process almost completely, whereas SiO/sub 2/ is known to enhance it. The aluminum diffusion coefficients for samples annealed at 920/spl deg/C for 30 s are 4.0/spl times/10/sup -17/ cm/sup 2//s and 2.1/spl times/10/sup -15/ cm/sup 2//s for SrF/sub 2/ and SiO/sub 2/ caps, respectively. The activation energies found were 4.09 and 6.40 eV for the same two caps.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.303680</doi><tpages>7</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum Annealing Chemicals Condensed matter: structure, mechanical and thermal properties Diffusion interface formation Energy measurement Energy states Exact sciences and technology Gallium arsenide Photoluminescence Photonic band gap Physics Quantum mechanics Shape control Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion |
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