Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

A 980-nm strained InGaAs quantum-well (QW) laser is the preferred pump source for an Er/sup 3+/-doped fiber amplifier for the next generation of lightwave communication systems because of lower noise, high power conversion efficiency, and low temperature sensitivity. Obtaining long lifetime, narrow...

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Veröffentlicht in:	IEEE journal of quantum electronics 1994-02, Vol.30 (2), p.424-440
Hauptverfasser:	Chand, M., Chu, S.N.G., Dutta, N.K., Lopata, J., Geva, M., Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Current density Indium gallium arsenide Laser modes Optical device fabrication Power lasers Quantum well lasers Temperature Threshold current Time of arrival estimation Waveguide lasers
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