Thermal analysis of integrated circuit devices and packages

The integrated circuit device is modeled as a four-layer structure with multiple heat sources located on the surface of the first layer and with the fourth layer representing the device package. Each layer is assumed to have the same rectangular dimensions. Using the separation of variables, an anal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on components, hybrids, and manufacturing technology hybrids, and manufacturing technology, 1989-12, Vol.12 (4), p.701-709
Hauptverfasser: Lee, C.C., Palisoc, A.L., Min, Y.J.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!