A scaleable, radiation hardened shallow trench isolation

Shallow trench isolation (STI) is rapidly replacing LOCOS (LOCal Oxidation of Silicon) as the device isolation process of choice. However, little work has been done to characterize the radiation-hardness capability of devices built with STI. In this paper, some of the basics of STI devices are exami...

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Veröffentlicht in:	IEEE transactions on nuclear science 1999-12, Vol.46 (6), p.1836-1840
Hauptverfasser:	Brady, F.T., Maimon, J.D., Hurt, M.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS CMOS technology Contracts DESIGN Devices ENGINEERING Etching Foundries Gating and risering Hardness INSTRUMENTATION Oxidation PHYSICAL RADIATION EFFECTS RADIATION DOSES Radiation hardening RESPONSE FUNCTIONS Scalability SCALING LAWS SEMICONDUCTOR DEVICES Silicon Temperature Threshold voltage Trenches
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