Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons

Electron irradiation of 100% internal quantum efficiency silicon photodiodes having a thin (60 /spl Aring/) SiO/sub 2/ dead layer results in measured responsivities ranging from 0.056 A/W at an incident electron energy E/sub 0/=0.2 keV to 0.24 A/W at E/sub 0/=40 keV. By comparing the data to a Monte...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science 1997-12, Vol.44 (6), p.2561-2565
Hauptverfasser:	Funsten, H.O., Suszcynsky, D.M., Ritzau, S.M., Korde, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	70 PLASMA PHYSICS AND FUSION Charge carrier processes COMPARATIVE EVALUATIONS Current measurement Electron beams ENERGY LOSSES Energy measurement PHOTODIODES PLASMA DIAGNOSTICS Plasma measurements Pulse measurements RADIATION DETECTORS Radiation effects RESPONSE FUNCTIONS Silicon
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