Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons
Electron irradiation of 100% internal quantum efficiency silicon photodiodes having a thin (60 /spl Aring/) SiO/sub 2/ dead layer results in measured responsivities ranging from 0.056 A/W at an incident electron energy E/sub 0/=0.2 keV to 0.24 A/W at E/sub 0/=40 keV. By comparing the data to a Monte...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1997-12, Vol.44 (6), p.2561-2565 |
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| container_end_page | 2565 |
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| container_issue | 6 |
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| container_title | IEEE Transactions on Nuclear Science |
| container_volume | 44 |
| creator | Funsten, H.O. Suszcynsky, D.M. Ritzau, S.M. Korde, R. |
| description | Electron irradiation of 100% internal quantum efficiency silicon photodiodes having a thin (60 /spl Aring/) SiO/sub 2/ dead layer results in measured responsivities ranging from 0.056 A/W at an incident electron energy E/sub 0/=0.2 keV to 0.24 A/W at E/sub 0/=40 keV. By comparing the data to a Monte Carlo simulation of electron interactions with the photodiode over an energy range of 1-40 keV, we derive an average electron-hole pair creation energy of 3.71 eV, in close agreement with other studies. Analysis of electron energy lost to processes that do not contribute to electron-hole pair creation shows that the energy lost in the SiO/sub 2/ dead layer is dominant for E/sub 0/1.5 keV. At E/sub 0/=300 eV, the Monte Carlo simulation results show that the electron projected range is significantly less than the dead layer thickness even though the measured response is 0.082 A/W, indicating that electron-hole pairs generated in the oxide dead layer are collected by the junction. |
| doi_str_mv | 10.1109/23.650863 |
| format | Article |
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By comparing the data to a Monte Carlo simulation of electron interactions with the photodiode over an energy range of 1-40 keV, we derive an average electron-hole pair creation energy of 3.71 eV, in close agreement with other studies. Analysis of electron energy lost to processes that do not contribute to electron-hole pair creation shows that the energy lost in the SiO/sub 2/ dead layer is dominant for E/sub 0/<1.5 keV, whereas the energy removed by backscattered electrons is dominant for E/sub 0/>1.5 keV. 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By comparing the data to a Monte Carlo simulation of electron interactions with the photodiode over an energy range of 1-40 keV, we derive an average electron-hole pair creation energy of 3.71 eV, in close agreement with other studies. Analysis of electron energy lost to processes that do not contribute to electron-hole pair creation shows that the energy lost in the SiO/sub 2/ dead layer is dominant for E/sub 0/<1.5 keV, whereas the energy removed by backscattered electrons is dominant for E/sub 0/>1.5 keV. At E/sub 0/=300 eV, the Monte Carlo simulation results show that the electron projected range is significantly less than the dead layer thickness even though the measured response is 0.082 A/W, indicating that electron-hole pairs generated in the oxide dead layer are collected by the junction.</description><subject>70 PLASMA PHYSICS AND FUSION</subject><subject>Charge carrier processes</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>Current measurement</subject><subject>Electron beams</subject><subject>ENERGY LOSSES</subject><subject>Energy measurement</subject><subject>PHOTODIODES</subject><subject>PLASMA DIAGNOSTICS</subject><subject>Plasma measurements</subject><subject>Pulse measurements</subject><subject>RADIATION DETECTORS</subject><subject>Radiation effects</subject><subject>RESPONSE FUNCTIONS</subject><subject>Silicon</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAURS0EEqEwsDKZgYEh5dmOE3tEFV9SJSQEXRgix3lWDWlcYnfovycoFdPT1Tu6ujqEXDKYMwb6jot5KUGV4ohkTEqVM1mpY5IBMJXrQutTchbj1xgLCTIjn28Yt6GPSIOjDOCG-j7h0JuO_uxMn3Ybis5567G3exp9523o6XYdUmh9aDHSFCgHoLjKC6DfuKLYoU3D2HlOTpzpIl4c7ox8PD68L57z5evTy-J-mVte8ZQrg2gAW8kbLqQRzIlWNwacq7hFbaQsWOkarbSzpRWl4UwVzDTYGNSsAjEj11NviMnX0fqEdj3O7McdtVRSjTpm5HZi7BBiHNDV28FvzLCvGdR_5mou6sncyF5NrEfEf-7w_AUbAGgi</recordid><startdate>19971201</startdate><enddate>19971201</enddate><creator>Funsten, H.O.</creator><creator>Suszcynsky, D.M.</creator><creator>Ritzau, S.M.</creator><creator>Korde, R.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19971201</creationdate><title>Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons</title><author>Funsten, H.O. ; Suszcynsky, D.M. ; Ritzau, S.M. ; Korde, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c272t-8aeea0ed52b235a31f3d9ba0ff72ce9a55416fb989fc6c36a21841abebae91703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>70 PLASMA PHYSICS AND FUSION</topic><topic>Charge carrier processes</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>Current measurement</topic><topic>Electron beams</topic><topic>ENERGY LOSSES</topic><topic>Energy measurement</topic><topic>PHOTODIODES</topic><topic>PLASMA DIAGNOSTICS</topic><topic>Plasma measurements</topic><topic>Pulse measurements</topic><topic>RADIATION DETECTORS</topic><topic>Radiation effects</topic><topic>RESPONSE FUNCTIONS</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Funsten, H.O.</creatorcontrib><creatorcontrib>Suszcynsky, D.M.</creatorcontrib><creatorcontrib>Ritzau, S.M.</creatorcontrib><creatorcontrib>Korde, R.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Funsten, H.O.</au><au>Suszcynsky, D.M.</au><au>Ritzau, S.M.</au><au>Korde, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1997-12-01</date><risdate>1997</risdate><volume>44</volume><issue>6</issue><spage>2561</spage><epage>2565</epage><pages>2561-2565</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Electron irradiation of 100% internal quantum efficiency silicon photodiodes having a thin (60 /spl Aring/) SiO/sub 2/ dead layer results in measured responsivities ranging from 0.056 A/W at an incident electron energy E/sub 0/=0.2 keV to 0.24 A/W at E/sub 0/=40 keV. By comparing the data to a Monte Carlo simulation of electron interactions with the photodiode over an energy range of 1-40 keV, we derive an average electron-hole pair creation energy of 3.71 eV, in close agreement with other studies. Analysis of electron energy lost to processes that do not contribute to electron-hole pair creation shows that the energy lost in the SiO/sub 2/ dead layer is dominant for E/sub 0/<1.5 keV, whereas the energy removed by backscattered electrons is dominant for E/sub 0/>1.5 keV. At E/sub 0/=300 eV, the Monte Carlo simulation results show that the electron projected range is significantly less than the dead layer thickness even though the measured response is 0.082 A/W, indicating that electron-hole pairs generated in the oxide dead layer are collected by the junction.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.650863</doi><tpages>5</tpages></addata></record> |
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| subjects | 70 PLASMA PHYSICS AND FUSION Charge carrier processes COMPARATIVE EVALUATIONS Current measurement Electron beams ENERGY LOSSES Energy measurement PHOTODIODES PLASMA DIAGNOSTICS Plasma measurements Pulse measurements RADIATION DETECTORS Radiation effects RESPONSE FUNCTIONS Silicon |
| title | Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons |
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