A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science 1996-12, Vol.43 (6), p.2932-2937
Hauptverfasser: Johnson, G.H., Galloway, K.F., Schrimpf, R.D., Titus, J.L., Wheatley, C.F., Allenspach, M., Dachs, C.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier processes
COMPUTERIZED SIMULATION
Cranes
Electrodes
FAILURES
FETs
HEAVY IONS
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Ion beams
MOSFET
MOSFETs
Neck
Numerical simulation
PHYSICAL RADIATION EFFECTS
Power transistors
Silicon
THEORETICAL DATA
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Beschreibung
Zusammenfassung:The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.556888