Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD
The ionizing radiation tolerance of high-performance SiGe HBTs, grown by UHV/CVD and optimized for 77 K, has been investigated for the first time. Results at both 300 K and 77 K indicate that this SiGe technology is inherently radiation tolerant without additional processing steps. Perimeter-to-area...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.1558-1566 |
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| container_end_page | 1566 |
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| container_title | IEEE Transactions on Nuclear Science |
| container_volume | 42 |
| creator | Babcock, J.A. Cressler, J.D. Vempati, L.S. Clark, S.D. Jaeger, R.C. Harame, D.L. |
| description | The ionizing radiation tolerance of high-performance SiGe HBTs, grown by UHV/CVD and optimized for 77 K, has been investigated for the first time. Results at both 300 K and 77 K indicate that this SiGe technology is inherently radiation tolerant without additional processing steps. Perimeter-to-area analysis show parallel shifts in the collector and base current density for total radiation doses below 1.0 Mrad(Si). Relatively minor degradation in the current gain characteristics is observed for SiGe HBTs exposed to 1.0 Mrad(Si) of Co/sup 60/ gamma radiation, indicating that the technology is robust for many applications requiring a high degree of ionizing radiation tolerance. 1/f noise measurements made pre- and post-radiation show the appearance of a generation-recombination center in some of the SiGe HBTs after a total-dose exposure to 10.0 Mrad(Si). |
| doi_str_mv | 10.1109/23.488750 |
| format | Article |
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Results at both 300 K and 77 K indicate that this SiGe technology is inherently radiation tolerant without additional processing steps. Perimeter-to-area analysis show parallel shifts in the collector and base current density for total radiation doses below 1.0 Mrad(Si). Relatively minor degradation in the current gain characteristics is observed for SiGe HBTs exposed to 1.0 Mrad(Si) of Co/sup 60/ gamma radiation, indicating that the technology is robust for many applications requiring a high degree of ionizing radiation tolerance. 1/f noise measurements made pre- and post-radiation show the appearance of a generation-recombination center in some of the SiGe HBTs after a total-dose exposure to 10.0 Mrad(Si).</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.488750</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>CHEMICAL VAPOR DEPOSITION ; Circuit testing ; COBALT 60 ; Degradation ; ELECTRICAL PROPERTIES ; EXPERIMENTAL DATA ; Gallium arsenide ; GERMANIUM ALLOYS ; Germanium silicon alloys ; Heterojunction bipolar transistors ; HETEROJUNCTIONS ; INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS ; Ionizing radiation ; IONIZING RADIATIONS ; JUNCTION TRANSISTORS ; Microelectronics ; Modems ; PHYSICAL RADIATION EFFECTS ; SILICON ALLOYS ; Silicon germanium ; Space technology ; ULTRAHIGH VACUUM</subject><ispartof>IEEE Transactions on Nuclear Science, 1995-12, Vol.42 (6), p.1558-1566</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c303t-376757cea7061df2e3cfa2a38e90ca2e00e366e8f2ca7edc57283e20cb0c07573</citedby><cites>FETCH-LOGICAL-c303t-376757cea7061df2e3cfa2a38e90ca2e00e366e8f2ca7edc57283e20cb0c07573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/488750$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/488750$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/203673$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Babcock, J.A.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><creatorcontrib>Vempati, L.S.</creatorcontrib><creatorcontrib>Clark, S.D.</creatorcontrib><creatorcontrib>Jaeger, R.C.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><title>Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD</title><title>IEEE Transactions on Nuclear Science</title><addtitle>TNS</addtitle><description>The ionizing radiation tolerance of high-performance SiGe HBTs, grown by UHV/CVD and optimized for 77 K, has been investigated for the first time. Results at both 300 K and 77 K indicate that this SiGe technology is inherently radiation tolerant without additional processing steps. Perimeter-to-area analysis show parallel shifts in the collector and base current density for total radiation doses below 1.0 Mrad(Si). Relatively minor degradation in the current gain characteristics is observed for SiGe HBTs exposed to 1.0 Mrad(Si) of Co/sup 60/ gamma radiation, indicating that the technology is robust for many applications requiring a high degree of ionizing radiation tolerance. 1/f noise measurements made pre- and post-radiation show the appearance of a generation-recombination center in some of the SiGe HBTs after a total-dose exposure to 10.0 Mrad(Si).</description><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Circuit testing</subject><subject>COBALT 60</subject><subject>Degradation</subject><subject>ELECTRICAL PROPERTIES</subject><subject>EXPERIMENTAL DATA</subject><subject>Gallium arsenide</subject><subject>GERMANIUM ALLOYS</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>HETEROJUNCTIONS</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Ionizing radiation</subject><subject>IONIZING RADIATIONS</subject><subject>JUNCTION TRANSISTORS</subject><subject>Microelectronics</subject><subject>Modems</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>SILICON ALLOYS</subject><subject>Silicon germanium</subject><subject>Space technology</subject><subject>ULTRAHIGH VACUUM</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo90E1PAjEQBuDGaCKiB6-e6kXjYaEfdNs9KiqQkHgQuDalzELN0mK7xOCvd3WJp8nMPDOHF6FrSnqUkqLPeG-glBTkBHWoECqjQqpT1CGEqqwYFMU5ukjpo2kHgogOmk6Cd9_Or3E0K2dqFzyuQwXReAs4lHjj1ptsB7EMcfs3e3cjwOOn2X3C6xi-PF4e8Hy86A8Xz5forDRVgqtj7aL568tsOM6mb6PJ8HGaWU54nXGZSyEtGElyuioZcFsaZriCgljDgBDgeQ6qZNZIWFkhmeLAiF0SS5pL3kW37d-QaqeTdTXYjQ3eg601IzyXvDF3rdnF8LmHVOutSxaqyngI-6SZElQUNG_gQwttDClFKPUuuq2JB02J_s1UM67bTBt701oHAP_uuPwBaS9vpw</recordid><startdate>19951201</startdate><enddate>19951201</enddate><creator>Babcock, J.A.</creator><creator>Cressler, J.D.</creator><creator>Vempati, L.S.</creator><creator>Clark, S.D.</creator><creator>Jaeger, R.C.</creator><creator>Harame, D.L.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19951201</creationdate><title>Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD</title><author>Babcock, J.A. ; Cressler, J.D. ; Vempati, L.S. ; Clark, S.D. ; Jaeger, R.C. ; Harame, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c303t-376757cea7061df2e3cfa2a38e90ca2e00e366e8f2ca7edc57283e20cb0c07573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Circuit testing</topic><topic>COBALT 60</topic><topic>Degradation</topic><topic>ELECTRICAL PROPERTIES</topic><topic>EXPERIMENTAL DATA</topic><topic>Gallium arsenide</topic><topic>GERMANIUM ALLOYS</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>HETEROJUNCTIONS</topic><topic>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</topic><topic>Ionizing radiation</topic><topic>IONIZING RADIATIONS</topic><topic>JUNCTION TRANSISTORS</topic><topic>Microelectronics</topic><topic>Modems</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>SILICON ALLOYS</topic><topic>Silicon germanium</topic><topic>Space technology</topic><topic>ULTRAHIGH VACUUM</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Babcock, J.A.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><creatorcontrib>Vempati, L.S.</creatorcontrib><creatorcontrib>Clark, S.D.</creatorcontrib><creatorcontrib>Jaeger, R.C.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Babcock, J.A.</au><au>Cressler, J.D.</au><au>Vempati, L.S.</au><au>Clark, S.D.</au><au>Jaeger, R.C.</au><au>Harame, D.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1995-12-01</date><risdate>1995</risdate><volume>42</volume><issue>6</issue><spage>1558</spage><epage>1566</epage><pages>1558-1566</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The ionizing radiation tolerance of high-performance SiGe HBTs, grown by UHV/CVD and optimized for 77 K, has been investigated for the first time. Results at both 300 K and 77 K indicate that this SiGe technology is inherently radiation tolerant without additional processing steps. Perimeter-to-area analysis show parallel shifts in the collector and base current density for total radiation doses below 1.0 Mrad(Si). Relatively minor degradation in the current gain characteristics is observed for SiGe HBTs exposed to 1.0 Mrad(Si) of Co/sup 60/ gamma radiation, indicating that the technology is robust for many applications requiring a high degree of ionizing radiation tolerance. 1/f noise measurements made pre- and post-radiation show the appearance of a generation-recombination center in some of the SiGe HBTs after a total-dose exposure to 10.0 Mrad(Si).</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.488750</doi><tpages>9</tpages></addata></record> |
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| source | IEEE/IET Electronic Library |
| subjects | CHEMICAL VAPOR DEPOSITION Circuit testing COBALT 60 Degradation ELECTRICAL PROPERTIES EXPERIMENTAL DATA Gallium arsenide GERMANIUM ALLOYS Germanium silicon alloys Heterojunction bipolar transistors HETEROJUNCTIONS INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Ionizing radiation IONIZING RADIATIONS JUNCTION TRANSISTORS Microelectronics Modems PHYSICAL RADIATION EFFECTS SILICON ALLOYS Silicon germanium Space technology ULTRAHIGH VACUUM |
| title | Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD |
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