Proton, neutron and electron-induced displacement damage in germanium
Displacement damage factors for several types of germanium bipolar transistors have been measured for 15- and 30-MeV electrons, 22-, 40-, and 63-MeV protons, and fission neutrons. Each device was irradiated with both neutrons and either electrons or protons so that damage factor ratios could be dete...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) 1989-12, Vol.36 (6), p.1882-1888 |
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| container_end_page | 1888 |
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| container_issue | 6 |
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| container_title | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) |
| container_volume | 36 |
| creator | Marshall, P.W. Dale, C.J. Summers, G.P. Wolicki, E.A. Burke, E.A. |
| description | Displacement damage factors for several types of germanium bipolar transistors have been measured for 15- and 30-MeV electrons, 22-, 40-, and 63-MeV protons, and fission neutrons. Each device was irradiated with both neutrons and either electrons or protons so that damage factor ratios could be determined. In this way dependence on resistivity, injection level, and device variability could be removed. The damage factor ratios were found to be directly proportional to the calculated nonionizing energy loss for electrons and protons over approximately two orders of magnitude. This means that the damage factors are directly proportional to the number of defects initially formed, whether as point defects or in cascades, and that the stable defects act independently so far as transistor gain is concerned. No evidence of cluster-space-charge effects was found. The implication of the results for a determination of a 1-MeV (GE) neutron damage equivalent fluence is discussed.< > |
| doi_str_mv | 10.1109/23.45382 |
| format | Article |
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Each device was irradiated with both neutrons and either electrons or protons so that damage factor ratios could be determined. In this way dependence on resistivity, injection level, and device variability could be removed. The damage factor ratios were found to be directly proportional to the calculated nonionizing energy loss for electrons and protons over approximately two orders of magnitude. This means that the damage factors are directly proportional to the number of defects initially formed, whether as point defects or in cascades, and that the stable defects act independently so far as transistor gain is concerned. No evidence of cluster-space-charge effects was found. The implication of the results for a determination of a 1-MeV (GE) neutron damage equivalent fluence is discussed.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.45382</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>360605 - Materials- Radiation Effects ; 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems ; 654001 - Radiation & Shielding Physics- Radiation Physics, Shielding Calculations & Experiments ; 654003 - Radiation & Shielding Physics- Neutron Interactions with Matter ; BARYONS ; Bipolar transistors ; ELECTRONS ; ELEMENTARY PARTICLES ; ELEMENTS ; Energy loss ; FERMIONS ; Gallium arsenide ; GERMANIUM ; HADRONS ; HARDENING ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; INTERACTIONS ; Laboratories ; LEPTONS ; MATERIALS SCIENCE ; MATTER ; METALS ; NEUTRONS ; NUCLEAR PHYSICS AND RADIATION PHYSICS ; NUCLEONS ; PHYSICAL RADIATION EFFECTS ; PROTONS ; RADIATION EFFECTS ; RADIATION HARDENING ; SEMICONDUCTOR DEVICES ; Silicon ; Space charge ; TRANSISTORS</subject><ispartof>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1989-12, Vol.36 (6), p.1882-1888</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-59d75049294d872b5b66ce1656ab2113f9674d9dabb1819bab0e78c8a62add4f3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/45382$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,792,881,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/45382$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/7202239$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Marshall, P.W.</creatorcontrib><creatorcontrib>Dale, C.J.</creatorcontrib><creatorcontrib>Summers, G.P.</creatorcontrib><creatorcontrib>Wolicki, E.A.</creatorcontrib><creatorcontrib>Burke, E.A.</creatorcontrib><title>Proton, neutron and electron-induced displacement damage in germanium</title><title>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)</title><addtitle>TNS</addtitle><description>Displacement damage factors for several types of germanium bipolar transistors have been measured for 15- and 30-MeV electrons, 22-, 40-, and 63-MeV protons, and fission neutrons. Each device was irradiated with both neutrons and either electrons or protons so that damage factor ratios could be determined. In this way dependence on resistivity, injection level, and device variability could be removed. The damage factor ratios were found to be directly proportional to the calculated nonionizing energy loss for electrons and protons over approximately two orders of magnitude. This means that the damage factors are directly proportional to the number of defects initially formed, whether as point defects or in cascades, and that the stable defects act independently so far as transistor gain is concerned. No evidence of cluster-space-charge effects was found. The implication of the results for a determination of a 1-MeV (GE) neutron damage equivalent fluence is discussed.< ></description><subject>360605 - Materials- Radiation Effects</subject><subject>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><subject>654001 - Radiation & Shielding Physics- Radiation Physics, Shielding Calculations & Experiments</subject><subject>654003 - Radiation & Shielding Physics- Neutron Interactions with Matter</subject><subject>BARYONS</subject><subject>Bipolar transistors</subject><subject>ELECTRONS</subject><subject>ELEMENTARY PARTICLES</subject><subject>ELEMENTS</subject><subject>Energy loss</subject><subject>FERMIONS</subject><subject>Gallium arsenide</subject><subject>GERMANIUM</subject><subject>HADRONS</subject><subject>HARDENING</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>INTERACTIONS</subject><subject>Laboratories</subject><subject>LEPTONS</subject><subject>MATERIALS SCIENCE</subject><subject>MATTER</subject><subject>METALS</subject><subject>NEUTRONS</subject><subject>NUCLEAR PHYSICS AND RADIATION PHYSICS</subject><subject>NUCLEONS</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>PROTONS</subject><subject>RADIATION EFFECTS</subject><subject>RADIATION HARDENING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Silicon</subject><subject>Space charge</subject><subject>TRANSISTORS</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo90E1LxDAQBuAgCq4f4NVb8SAe7JqkSZscZVk_YEEPeg5pMl0jbbIm6cF_b9eKp-FlHobhReiC4CUhWN7Rasl4JegBWhDORUl4Iw7RAmMiSsmkPEYnKX1OkXHMF2j9GkMO_rbwMOYYfKG9LaAHsw-l83Y0YAvr0q7XBgbwubB60FsonC-2EAft3TicoaNO9wnO_-Ypen9Yv62eys3L4_PqflOaCpNccmkbjpmkklnR0Ja3dW2A1LzWLSWk6mTdMCutblsiiGx1i6ERRuiaamtZV52iq_luSNmpZFwG82GC99O_qqGY0kpO6HpGuxi-RkhZDS4Z6HvtIYxJUcEpp4xO8GaGJoaUInRqF92g47ciWO3LVLRSv2VO9HKmDgD-2bz7AWtrbf0</recordid><startdate>19891201</startdate><enddate>19891201</enddate><creator>Marshall, P.W.</creator><creator>Dale, C.J.</creator><creator>Summers, G.P.</creator><creator>Wolicki, E.A.</creator><creator>Burke, E.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19891201</creationdate><title>Proton, neutron and electron-induced displacement damage in germanium</title><author>Marshall, P.W. ; Dale, C.J. ; Summers, G.P. ; Wolicki, E.A. ; Burke, E.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-59d75049294d872b5b66ce1656ab2113f9674d9dabb1819bab0e78c8a62add4f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>360605 - Materials- Radiation Effects</topic><topic>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</topic><topic>654001 - Radiation & Shielding Physics- Radiation Physics, Shielding Calculations & Experiments</topic><topic>654003 - Radiation & Shielding Physics- Neutron Interactions with Matter</topic><topic>BARYONS</topic><topic>Bipolar transistors</topic><topic>ELECTRONS</topic><topic>ELEMENTARY PARTICLES</topic><topic>ELEMENTS</topic><topic>Energy loss</topic><topic>FERMIONS</topic><topic>Gallium arsenide</topic><topic>GERMANIUM</topic><topic>HADRONS</topic><topic>HARDENING</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>INTERACTIONS</topic><topic>Laboratories</topic><topic>LEPTONS</topic><topic>MATERIALS SCIENCE</topic><topic>MATTER</topic><topic>METALS</topic><topic>NEUTRONS</topic><topic>NUCLEAR PHYSICS AND RADIATION PHYSICS</topic><topic>NUCLEONS</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>PROTONS</topic><topic>RADIATION EFFECTS</topic><topic>RADIATION HARDENING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Silicon</topic><topic>Space charge</topic><topic>TRANSISTORS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Marshall, P.W.</creatorcontrib><creatorcontrib>Dale, C.J.</creatorcontrib><creatorcontrib>Summers, G.P.</creatorcontrib><creatorcontrib>Wolicki, E.A.</creatorcontrib><creatorcontrib>Burke, E.A.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Marshall, P.W.</au><au>Dale, C.J.</au><au>Summers, G.P.</au><au>Wolicki, E.A.</au><au>Burke, E.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Proton, neutron and electron-induced displacement damage in germanium</atitle><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)</jtitle><stitle>TNS</stitle><date>1989-12-01</date><risdate>1989</risdate><volume>36</volume><issue>6</issue><spage>1882</spage><epage>1888</epage><pages>1882-1888</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Displacement damage factors for several types of germanium bipolar transistors have been measured for 15- and 30-MeV electrons, 22-, 40-, and 63-MeV protons, and fission neutrons. Each device was irradiated with both neutrons and either electrons or protons so that damage factor ratios could be determined. In this way dependence on resistivity, injection level, and device variability could be removed. The damage factor ratios were found to be directly proportional to the calculated nonionizing energy loss for electrons and protons over approximately two orders of magnitude. This means that the damage factors are directly proportional to the number of defects initially formed, whether as point defects or in cascades, and that the stable defects act independently so far as transistor gain is concerned. No evidence of cluster-space-charge effects was found. The implication of the results for a determination of a 1-MeV (GE) neutron damage equivalent fluence is discussed.< ></abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.45382</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1989-12, Vol.36 (6), p.1882-1888 |
| issn | 0018-9499 1558-1578 |
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| source | IEEE Electronic Library (IEL) |
| subjects | 360605 - Materials- Radiation Effects 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems 654001 - Radiation & Shielding Physics- Radiation Physics, Shielding Calculations & Experiments 654003 - Radiation & Shielding Physics- Neutron Interactions with Matter BARYONS Bipolar transistors ELECTRONS ELEMENTARY PARTICLES ELEMENTS Energy loss FERMIONS Gallium arsenide GERMANIUM HADRONS HARDENING INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY INTERACTIONS Laboratories LEPTONS MATERIALS SCIENCE MATTER METALS NEUTRONS NUCLEAR PHYSICS AND RADIATION PHYSICS NUCLEONS PHYSICAL RADIATION EFFECTS PROTONS RADIATION EFFECTS RADIATION HARDENING SEMICONDUCTOR DEVICES Silicon Space charge TRANSISTORS |
| title | Proton, neutron and electron-induced displacement damage in germanium |
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