Amorphous silicon pixel layers with cesium iodide converters for medical radiography

We describe the properties of evaporated layers of cesium iodide (thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220 /spl mu/m. We used the two-boat evaporator system to deposit CsI(Tl) layers....

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Veröffentlicht in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-08, Vol.41 (4), p.903-909
Hauptverfasser: Jing, T., Goodman, C.A., Drewery, J., Cho, G., Hong, W.S., Lee, H., Kaplan, S.N., Mireshghi, A., Perez-Mendez, V., Wildermuth, D.
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Sprache:eng
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