Amorphous silicon pixel layers with cesium iodide converters for medical radiography
We describe the properties of evaporated layers of cesium iodide (thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220 /spl mu/m. We used the two-boat evaporator system to deposit CsI(Tl) layers....
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-08, Vol.41 (4), p.903-909 |
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| container_title | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) |
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| creator | Jing, T. Goodman, C.A. Drewery, J. Cho, G. Hong, W.S. Lee, H. Kaplan, S.N. Mireshghi, A. Perez-Mendez, V. Wildermuth, D. |
| description | We describe the properties of evaporated layers of cesium iodide (thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220 /spl mu/m. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1-0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200-360/spl deg/C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately 1 /spl mu/m thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less than 50 /spl mu/m. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on patterned substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level.< > |
| doi_str_mv | 10.1109/23.322829 |
| format | Article |
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The CsI(Tl) layers range in thickness from 65 to 220 /spl mu/m. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1-0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200-360/spl deg/C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately 1 /spl mu/m thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less than 50 /spl mu/m. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on patterned substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.322829</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amorphous silicon ; Annealing ; Biological and medical sciences ; BIOMEDICAL RADIOGRAPHY ; DESIGN ; DIAGNOSTIC TECHNIQUES ; Electrodes ; IMAGE INTENSIFIERS ; IMAGE PROCESSING ; Investigative techniques, diagnostic techniques (general aspects) ; Medical sciences ; MEDICINE ; Microstructure ; Miscellaneous. Technology ; NUCLEAR MEDICINE ; Optical arrays ; OPTIMIZATION ; P-i-n diodes ; PROCESSING ; Radiodiagnosis. Nmr imagery. Nmr spectrometry ; RADIOLOGY ; RADIOLOGY AND NUCLEAR MEDICINE ; RESOLUTION 550602 -- Medicine-- External Radiation in Diagnostics-- (1980-) ; Solid scintillation detectors ; SPATIAL RESOLUTION ; Substrates ; Temperature ; X-ray detection</subject><ispartof>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-08, Vol.41 (4), p.903-909</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-9e81794b6262a9c877c06ad693216d187d6d4c146f04a18dae9b001849aea1df3</citedby><cites>FETCH-LOGICAL-c430t-9e81794b6262a9c877c06ad693216d187d6d4c146f04a18dae9b001849aea1df3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/322829$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,792,881,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/322829$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3393186$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6950805$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Jing, T.</creatorcontrib><creatorcontrib>Goodman, C.A.</creatorcontrib><creatorcontrib>Drewery, J.</creatorcontrib><creatorcontrib>Cho, G.</creatorcontrib><creatorcontrib>Hong, W.S.</creatorcontrib><creatorcontrib>Lee, H.</creatorcontrib><creatorcontrib>Kaplan, S.N.</creatorcontrib><creatorcontrib>Mireshghi, A.</creatorcontrib><creatorcontrib>Perez-Mendez, V.</creatorcontrib><creatorcontrib>Wildermuth, D.</creatorcontrib><title>Amorphous silicon pixel layers with cesium iodide converters for medical radiography</title><title>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</title><addtitle>TNS</addtitle><description>We describe the properties of evaporated layers of cesium iodide (thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220 /spl mu/m. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1-0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200-360/spl deg/C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately 1 /spl mu/m thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less than 50 /spl mu/m. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on patterned substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level.< ></description><subject>Amorphous silicon</subject><subject>Annealing</subject><subject>Biological and medical sciences</subject><subject>BIOMEDICAL RADIOGRAPHY</subject><subject>DESIGN</subject><subject>DIAGNOSTIC TECHNIQUES</subject><subject>Electrodes</subject><subject>IMAGE INTENSIFIERS</subject><subject>IMAGE PROCESSING</subject><subject>Investigative techniques, diagnostic techniques (general aspects)</subject><subject>Medical sciences</subject><subject>MEDICINE</subject><subject>Microstructure</subject><subject>Miscellaneous. Technology</subject><subject>NUCLEAR MEDICINE</subject><subject>Optical arrays</subject><subject>OPTIMIZATION</subject><subject>P-i-n diodes</subject><subject>PROCESSING</subject><subject>Radiodiagnosis. Nmr imagery. Nmr spectrometry</subject><subject>RADIOLOGY</subject><subject>RADIOLOGY AND NUCLEAR MEDICINE</subject><subject>RESOLUTION 550602 -- Medicine-- External Radiation in Diagnostics-- (1980-)</subject><subject>Solid scintillation detectors</subject><subject>SPATIAL RESOLUTION</subject><subject>Substrates</subject><subject>Temperature</subject><subject>X-ray detection</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqF0UFLHDEUB_AgFdyqB689BSlCD6N5SSaTHJeltgXBi55DTN64KTObMZmt3W_vLLO0xz2F8H75k_ceIVfAbgGYuePiVnCuuTkhC6hrXUHd6E9kwRjoykhjzsjnUn5PV1mzekGeln3KwzptCy2xiz5t6BD_Ykc7t8Nc6Hsc19RjiduexhRiQDqZP5jHfbVNmfYYoncdzS7E9JrdsN5dkNPWdQUvD-c5eb7__rT6WT08_vi1Wj5UXgo2VgY1NEa-KK64M143jWfKBWUEBxVAN0EF6UGqlkkHOjg0L_s-pHHoILTinFzPuamM0RYfR_Tr6Xsb9KNVpmaa1RO6mdGQ09sWy2j7WDx2ndvg1LblWrIaDD8OlVSikXAUgjJSCLZP_DZDn1MpGVs75Ni7vLPA7H5dlgs7r2uyXw-hrkzjbLPb-Fj-PRDCCNBqYl9mFhHxf3XO-AAn2Jue</recordid><startdate>19940801</startdate><enddate>19940801</enddate><creator>Jing, T.</creator><creator>Goodman, C.A.</creator><creator>Drewery, J.</creator><creator>Cho, G.</creator><creator>Hong, W.S.</creator><creator>Lee, H.</creator><creator>Kaplan, S.N.</creator><creator>Mireshghi, A.</creator><creator>Perez-Mendez, V.</creator><creator>Wildermuth, D.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QO</scope><scope>8FD</scope><scope>FR3</scope><scope>P64</scope><scope>7SP</scope><scope>7U5</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19940801</creationdate><title>Amorphous silicon pixel layers with cesium iodide converters for medical radiography</title><author>Jing, T. ; Goodman, C.A. ; Drewery, J. ; Cho, G. ; Hong, W.S. ; Lee, H. ; Kaplan, S.N. ; Mireshghi, A. ; Perez-Mendez, V. ; Wildermuth, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c430t-9e81794b6262a9c877c06ad693216d187d6d4c146f04a18dae9b001849aea1df3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Amorphous silicon</topic><topic>Annealing</topic><topic>Biological and medical sciences</topic><topic>BIOMEDICAL RADIOGRAPHY</topic><topic>DESIGN</topic><topic>DIAGNOSTIC TECHNIQUES</topic><topic>Electrodes</topic><topic>IMAGE INTENSIFIERS</topic><topic>IMAGE PROCESSING</topic><topic>Investigative techniques, diagnostic techniques (general aspects)</topic><topic>Medical sciences</topic><topic>MEDICINE</topic><topic>Microstructure</topic><topic>Miscellaneous. Technology</topic><topic>NUCLEAR MEDICINE</topic><topic>Optical arrays</topic><topic>OPTIMIZATION</topic><topic>P-i-n diodes</topic><topic>PROCESSING</topic><topic>Radiodiagnosis. Nmr imagery. Nmr spectrometry</topic><topic>RADIOLOGY</topic><topic>RADIOLOGY AND NUCLEAR MEDICINE</topic><topic>RESOLUTION 550602 -- Medicine-- External Radiation in Diagnostics-- (1980-)</topic><topic>Solid scintillation detectors</topic><topic>SPATIAL RESOLUTION</topic><topic>Substrates</topic><topic>Temperature</topic><topic>X-ray detection</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jing, T.</creatorcontrib><creatorcontrib>Goodman, C.A.</creatorcontrib><creatorcontrib>Drewery, J.</creatorcontrib><creatorcontrib>Cho, G.</creatorcontrib><creatorcontrib>Hong, W.S.</creatorcontrib><creatorcontrib>Lee, H.</creatorcontrib><creatorcontrib>Kaplan, S.N.</creatorcontrib><creatorcontrib>Mireshghi, A.</creatorcontrib><creatorcontrib>Perez-Mendez, V.</creatorcontrib><creatorcontrib>Wildermuth, D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Biotechnology Research Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jing, T.</au><au>Goodman, C.A.</au><au>Drewery, J.</au><au>Cho, G.</au><au>Hong, W.S.</au><au>Lee, H.</au><au>Kaplan, S.N.</au><au>Mireshghi, A.</au><au>Perez-Mendez, V.</au><au>Wildermuth, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous silicon pixel layers with cesium iodide converters for medical radiography</atitle><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle><stitle>TNS</stitle><date>1994-08-01</date><risdate>1994</risdate><volume>41</volume><issue>4</issue><spage>903</spage><epage>909</epage><pages>903-909</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>We describe the properties of evaporated layers of cesium iodide (thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220 /spl mu/m. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1-0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200-360/spl deg/C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately 1 /spl mu/m thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less than 50 /spl mu/m. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on patterned substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/23.322829</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Amorphous silicon Annealing Biological and medical sciences BIOMEDICAL RADIOGRAPHY DESIGN DIAGNOSTIC TECHNIQUES Electrodes IMAGE INTENSIFIERS IMAGE PROCESSING Investigative techniques, diagnostic techniques (general aspects) Medical sciences MEDICINE Microstructure Miscellaneous. Technology NUCLEAR MEDICINE Optical arrays OPTIMIZATION P-i-n diodes PROCESSING Radiodiagnosis. Nmr imagery. Nmr spectrometry RADIOLOGY RADIOLOGY AND NUCLEAR MEDICINE RESOLUTION 550602 -- Medicine-- External Radiation in Diagnostics-- (1980-) Solid scintillation detectors SPATIAL RESOLUTION Substrates Temperature X-ray detection |
| title | Amorphous silicon pixel layers with cesium iodide converters for medical radiography |
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