A novel HBT distributed amplifier design topology based on attenuation compensation techniques
We report on a novel HBT distributed amplifier design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the inpu...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1994-12, Vol.42 (12), p.2583-2589 |
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| container_end_page | 2589 |
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| container_issue | 12 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 42 |
| creator | Kobayashi, K.W. Esfandiari, R. Oki, A.K. |
| description | We report on a novel HBT distributed amplifier design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA's, /spl ap/3.67, which is a 55% improvement over existing state-of-the-art performance. Attenuation compensation of the input transmission line is realized using HBT active impedance transformations. The resulting transistor configuration consists of a common-collector driving a common-emitter-cascode transistor pair. This configuration offers 15-20 dB more available gain for the device unit cell, and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration. This paper discusses the design theory, techniques, and measurements of this newly developed HBT distributed amplifier topology.< > |
| doi_str_mv | 10.1109/22.339800 |
| format | Article |
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This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA's, /spl ap/3.67, which is a 55% improvement over existing state-of-the-art performance. Attenuation compensation of the input transmission line is realized using HBT active impedance transformations. The resulting transistor configuration consists of a common-collector driving a common-emitter-cascode transistor pair. This configuration offers 15-20 dB more available gain for the device unit cell, and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration. This paper discusses the design theory, techniques, and measurements of this newly developed HBT distributed amplifier topology.< ></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.339800</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Attenuation ; Capacitance ; Circuit properties ; Cutoff frequency ; Distributed amplifiers ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Heterojunction bipolar transistors ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Power transmission lines ; Propagation losses ; Space technology ; Topology ; Transmission line theory</subject><ispartof>IEEE transactions on microwave theory and techniques, 1994-12, Vol.42 (12), p.2583-2589</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-4118530c41c869eaf3a913cbc7a9f9e33ec821be5f4ba6729e1f56ba8b629ca23</citedby><cites>FETCH-LOGICAL-c337t-4118530c41c869eaf3a913cbc7a9f9e33ec821be5f4ba6729e1f56ba8b629ca23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/339800$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/339800$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3434164$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kobayashi, K.W.</creatorcontrib><creatorcontrib>Esfandiari, R.</creatorcontrib><creatorcontrib>Oki, A.K.</creatorcontrib><title>A novel HBT distributed amplifier design topology based on attenuation compensation techniques</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>We report on a novel HBT distributed amplifier design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA's, /spl ap/3.67, which is a 55% improvement over existing state-of-the-art performance. Attenuation compensation of the input transmission line is realized using HBT active impedance transformations. The resulting transistor configuration consists of a common-collector driving a common-emitter-cascode transistor pair. This configuration offers 15-20 dB more available gain for the device unit cell, and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration. This paper discusses the design theory, techniques, and measurements of this newly developed HBT distributed amplifier topology.< ></description><subject>Applied sciences</subject><subject>Attenuation</subject><subject>Capacitance</subject><subject>Circuit properties</subject><subject>Cutoff frequency</subject><subject>Distributed amplifiers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Heterojunction bipolar transistors</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Power transmission lines</subject><subject>Propagation losses</subject><subject>Space technology</subject><subject>Topology</subject><subject>Transmission line theory</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNkL1PwzAQxS0EEqUwsDJlQEgMKf5M7LFUfEmVWMpK5LjnYpTEwXaR-t-TKhWsTHdP73fvpIfQJcEzQrC6o3TGmJIYH6EJEaLMVVHiYzTBmMhccYlP0VmMn4PkAssJep9nnf-GJnu-X2VrF1Nw9TbBOtNt3zjrIGRriG7TZcn3vvGbXVbrOPi-y3RK0G11csNufNtDF0eRwHx07msL8RydWN1EuDjMKXp7fFgtnvPl69PLYr7MDWNlyjkhUjBsODGyUKAt04owU5tSK6uAMTCSkhqE5bUuSqqAWFHUWtYFVUZTNkU3Y24f_P5vqloXDTSN7sBvY0WlUgUn6h8gl0JgNoC3I2iCjzGArfrgWh12FcHVvuqK0mqsemCvD6E6Gt3YoDvj4u8B44yTgg_Y1Yg5APhzx4wfWdaG3Q</recordid><startdate>19941201</startdate><enddate>19941201</enddate><creator>Kobayashi, K.W.</creator><creator>Esfandiari, R.</creator><creator>Oki, A.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19941201</creationdate><title>A novel HBT distributed amplifier design topology based on attenuation compensation techniques</title><author>Kobayashi, K.W. ; Esfandiari, R. ; Oki, A.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-4118530c41c869eaf3a913cbc7a9f9e33ec821be5f4ba6729e1f56ba8b629ca23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Attenuation</topic><topic>Capacitance</topic><topic>Circuit properties</topic><topic>Cutoff frequency</topic><topic>Distributed amplifiers</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Heterojunction bipolar transistors</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Power transmission lines</topic><topic>Propagation losses</topic><topic>Space technology</topic><topic>Topology</topic><topic>Transmission line theory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kobayashi, K.W.</creatorcontrib><creatorcontrib>Esfandiari, R.</creatorcontrib><creatorcontrib>Oki, A.K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kobayashi, K.W.</au><au>Esfandiari, R.</au><au>Oki, A.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel HBT distributed amplifier design topology based on attenuation compensation techniques</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1994-12-01</date><risdate>1994</risdate><volume>42</volume><issue>12</issue><spage>2583</spage><epage>2589</epage><pages>2583-2589</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>We report on a novel HBT distributed amplifier design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA's, /spl ap/3.67, which is a 55% improvement over existing state-of-the-art performance. Attenuation compensation of the input transmission line is realized using HBT active impedance transformations. The resulting transistor configuration consists of a common-collector driving a common-emitter-cascode transistor pair. This configuration offers 15-20 dB more available gain for the device unit cell, and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration. This paper discusses the design theory, techniques, and measurements of this newly developed HBT distributed amplifier topology.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/22.339800</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1994-12, Vol.42 (12), p.2583-2589 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Attenuation Capacitance Circuit properties Cutoff frequency Distributed amplifiers Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Heterojunction bipolar transistors Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Power transmission lines Propagation losses Space technology Topology Transmission line theory |
| title | A novel HBT distributed amplifier design topology based on attenuation compensation techniques |
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