An experimental study of the effects of harmonic loading on microwave MESFET oscillators and amplifiers
This paper reports an extensive experimental investigation of the effects of second harmonic loading on the performance of microwave GaAs MESFET oscillators and strongly driven amplifiers. The measurement system used is an active load system based on six-port techniques. Harmonic load pull measureme...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1994-06, Vol.42 (6), p.943-950 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 950 |
|---|---|
| container_issue | 6 |
| container_start_page | 943 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 42 |
| creator | Berini, Pierre Desgagne, Michel Ghannouchi, Fadhel M. Bosisio, Renato G. |
| description | This paper reports an extensive experimental investigation of the effects of second harmonic loading on the performance of microwave GaAs MESFET oscillators and strongly driven amplifiers. The measurement system used is an active load system based on six-port techniques. Harmonic load pull measurements were obtained for the NE72084 MESFET; the measurements show how the second harmonic load can influence the power gain and the power added efficiency in strongly driven amplifiers. The device line characterization technique was combined with the harmonic load pull technique; the measurement results illustrate how the output power and the DC to RF conversion efficiency of an oscillator depend on the choice of the second harmonic load. Amplifier and oscillator circuits have been designed using these measurements; the circuits have been constructed and measured. The results validate the experimental approach used and clearly illustrate the importance of properly selecting the second harmonic load in amplifier and oscillator circuits. Significant improvements in gain, output power and efficiency have been achieved by properly selecting the second harmonic load. |
| doi_str_mv | 10.1109/22.293562 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_22_293562</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9056101</ieee_id><sourcerecordid>28514465</sourcerecordid><originalsourceid>FETCH-LOGICAL-c366t-d84231173f3405d36831e6d5a0cb0fd0326989f8cbfd4c0c8e475e77368b149d3</originalsourceid><addsrcrecordid>eNqFkT1vFDEQhi0EEkegoKaxBEKi2DD-XLuMokCQgiiAeuWzx4mjXfuw94D8e3y6KEUaqtGreebrHUJeMzhlDOxHzk-5FUrzJ2TDlBoHq0d4SjYAzAxWGnhOXrR226VUYDbk-ixT_LvDmhbMq5tpW_fhjpZI1xukGCP6tR3kjatLycnTubiQ8jUtmS7J1_LH_Ub69eL7p4sftDSf5tmtpTbqcqBu2c0pJqztJXkW3dzw1X08IT97wfnlcPXt85fzs6vBC63XIRjJBWOjiEKCCkIbwVAH5cBvIQYQXFtjo_HbGKQHb1COCsexg1smbRAn5P2x766WX3ts67Sk5rEvlbHs28SNYlJq9X9QKwndsA6-fQTeln3N_YiJCzOCtqO2nfpwpLojrVWM065b6urdxGA6fGbifDp-prPv7ju65t0cq8s-tYcCyZRm4jD4zRFLiPiQtdCzwMQ_306UWA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2387069769</pqid></control><display><type>article</type><title>An experimental study of the effects of harmonic loading on microwave MESFET oscillators and amplifiers</title><source>IEEE Electronic Library (IEL)</source><creator>Berini, Pierre ; Desgagne, Michel ; Ghannouchi, Fadhel M. ; Bosisio, Renato G.</creator><creatorcontrib>Berini, Pierre ; Desgagne, Michel ; Ghannouchi, Fadhel M. ; Bosisio, Renato G.</creatorcontrib><description>This paper reports an extensive experimental investigation of the effects of second harmonic loading on the performance of microwave GaAs MESFET oscillators and strongly driven amplifiers. The measurement system used is an active load system based on six-port techniques. Harmonic load pull measurements were obtained for the NE72084 MESFET; the measurements show how the second harmonic load can influence the power gain and the power added efficiency in strongly driven amplifiers. The device line characterization technique was combined with the harmonic load pull technique; the measurement results illustrate how the output power and the DC to RF conversion efficiency of an oscillator depend on the choice of the second harmonic load. Amplifier and oscillator circuits have been designed using these measurements; the circuits have been constructed and measured. The results validate the experimental approach used and clearly illustrate the importance of properly selecting the second harmonic load in amplifier and oscillator circuits. Significant improvements in gain, output power and efficiency have been achieved by properly selecting the second harmonic load.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.293562</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplification ; Amplifiers ; Applied sciences ; Circuit design ; Circuit properties ; Efficiency ; Electric, optical and optoelectronic circuits ; Electronics ; Energy conversion efficiency ; Exact sciences and technology ; Gain ; Harmonic analysis ; Loading ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Oscillators ; Power gain ; Power harmonic filters ; Transistors</subject><ispartof>IEEE transactions on microwave theory and techniques, 1994-06, Vol.42 (6), p.943-950</ispartof><rights>1994 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 1994</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c366t-d84231173f3405d36831e6d5a0cb0fd0326989f8cbfd4c0c8e475e77368b149d3</citedby><cites>FETCH-LOGICAL-c366t-d84231173f3405d36831e6d5a0cb0fd0326989f8cbfd4c0c8e475e77368b149d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9056101$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9056101$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4156138$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Berini, Pierre</creatorcontrib><creatorcontrib>Desgagne, Michel</creatorcontrib><creatorcontrib>Ghannouchi, Fadhel M.</creatorcontrib><creatorcontrib>Bosisio, Renato G.</creatorcontrib><title>An experimental study of the effects of harmonic loading on microwave MESFET oscillators and amplifiers</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper reports an extensive experimental investigation of the effects of second harmonic loading on the performance of microwave GaAs MESFET oscillators and strongly driven amplifiers. The measurement system used is an active load system based on six-port techniques. Harmonic load pull measurements were obtained for the NE72084 MESFET; the measurements show how the second harmonic load can influence the power gain and the power added efficiency in strongly driven amplifiers. The device line characterization technique was combined with the harmonic load pull technique; the measurement results illustrate how the output power and the DC to RF conversion efficiency of an oscillator depend on the choice of the second harmonic load. Amplifier and oscillator circuits have been designed using these measurements; the circuits have been constructed and measured. The results validate the experimental approach used and clearly illustrate the importance of properly selecting the second harmonic load in amplifier and oscillator circuits. Significant improvements in gain, output power and efficiency have been achieved by properly selecting the second harmonic load.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit design</subject><subject>Circuit properties</subject><subject>Efficiency</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Energy conversion efficiency</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Harmonic analysis</subject><subject>Loading</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Oscillators</subject><subject>Power gain</subject><subject>Power harmonic filters</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqFkT1vFDEQhi0EEkegoKaxBEKi2DD-XLuMokCQgiiAeuWzx4mjXfuw94D8e3y6KEUaqtGreebrHUJeMzhlDOxHzk-5FUrzJ2TDlBoHq0d4SjYAzAxWGnhOXrR226VUYDbk-ixT_LvDmhbMq5tpW_fhjpZI1xukGCP6tR3kjatLycnTubiQ8jUtmS7J1_LH_Ub69eL7p4sftDSf5tmtpTbqcqBu2c0pJqztJXkW3dzw1X08IT97wfnlcPXt85fzs6vBC63XIRjJBWOjiEKCCkIbwVAH5cBvIQYQXFtjo_HbGKQHb1COCsexg1smbRAn5P2x766WX3ts67Sk5rEvlbHs28SNYlJq9X9QKwndsA6-fQTeln3N_YiJCzOCtqO2nfpwpLojrVWM065b6urdxGA6fGbifDp-prPv7ju65t0cq8s-tYcCyZRm4jD4zRFLiPiQtdCzwMQ_306UWA</recordid><startdate>19940601</startdate><enddate>19940601</enddate><creator>Berini, Pierre</creator><creator>Desgagne, Michel</creator><creator>Ghannouchi, Fadhel M.</creator><creator>Bosisio, Renato G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>19940601</creationdate><title>An experimental study of the effects of harmonic loading on microwave MESFET oscillators and amplifiers</title><author>Berini, Pierre ; Desgagne, Michel ; Ghannouchi, Fadhel M. ; Bosisio, Renato G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-d84231173f3405d36831e6d5a0cb0fd0326989f8cbfd4c0c8e475e77368b149d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Amplification</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit design</topic><topic>Circuit properties</topic><topic>Efficiency</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Energy conversion efficiency</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Harmonic analysis</topic><topic>Loading</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Oscillators</topic><topic>Power gain</topic><topic>Power harmonic filters</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Berini, Pierre</creatorcontrib><creatorcontrib>Desgagne, Michel</creatorcontrib><creatorcontrib>Ghannouchi, Fadhel M.</creatorcontrib><creatorcontrib>Bosisio, Renato G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Berini, Pierre</au><au>Desgagne, Michel</au><au>Ghannouchi, Fadhel M.</au><au>Bosisio, Renato G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An experimental study of the effects of harmonic loading on microwave MESFET oscillators and amplifiers</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1994-06-01</date><risdate>1994</risdate><volume>42</volume><issue>6</issue><spage>943</spage><epage>950</epage><pages>943-950</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper reports an extensive experimental investigation of the effects of second harmonic loading on the performance of microwave GaAs MESFET oscillators and strongly driven amplifiers. The measurement system used is an active load system based on six-port techniques. Harmonic load pull measurements were obtained for the NE72084 MESFET; the measurements show how the second harmonic load can influence the power gain and the power added efficiency in strongly driven amplifiers. The device line characterization technique was combined with the harmonic load pull technique; the measurement results illustrate how the output power and the DC to RF conversion efficiency of an oscillator depend on the choice of the second harmonic load. Amplifier and oscillator circuits have been designed using these measurements; the circuits have been constructed and measured. The results validate the experimental approach used and clearly illustrate the importance of properly selecting the second harmonic load in amplifier and oscillator circuits. Significant improvements in gain, output power and efficiency have been achieved by properly selecting the second harmonic load.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/22.293562</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1994-06, Vol.42 (6), p.943-950 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_22_293562 |
| source | IEEE Electronic Library (IEL) |
| subjects | Amplification Amplifiers Applied sciences Circuit design Circuit properties Efficiency Electric, optical and optoelectronic circuits Electronics Energy conversion efficiency Exact sciences and technology Gain Harmonic analysis Loading Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Oscillators Power gain Power harmonic filters Transistors |
| title | An experimental study of the effects of harmonic loading on microwave MESFET oscillators and amplifiers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T01%3A22%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20experimental%20study%20of%20the%20effects%20of%20harmonic%20loading%20on%20microwave%20MESFET%20oscillators%20and%20amplifiers&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Berini,%20Pierre&rft.date=1994-06-01&rft.volume=42&rft.issue=6&rft.spage=943&rft.epage=950&rft.pages=943-950&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/22.293562&rft_dat=%3Cproquest_RIE%3E28514465%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2387069769&rft_id=info:pmid/&rft_ieee_id=9056101&rfr_iscdi=true |