Quasi-dielectrically isolated bipolar junction transistor with subcollector fabricated using silicon selective epitaxy
A novel quasi-dielectrically isolated bipolar junction transistor (QDI-BJT) was developed for intelligent power ICs. Using a combination of junction and dielectric isolation, the QDI-BJT was achieved by selective epitaxial growth (SEG) of single-crystal silicon in an oxide-lined trench. Buried colle...
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| Veröffentlicht in: | IEEE transactions on electron devices 1991-07, Vol.38 (7), p.1660-1665 |
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| container_end_page | 1665 |
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| container_issue | 7 |
| container_start_page | 1660 |
| container_title | IEEE transactions on electron devices |
| container_volume | 38 |
| creator | Gilbert, P.V. Neudeck, G.W. Denton, J.P. Duey, S.J. |
| description | A novel quasi-dielectrically isolated bipolar junction transistor (QDI-BJT) was developed for intelligent power ICs. Using a combination of junction and dielectric isolation, the QDI-BJT was achieved by selective epitaxial growth (SEG) of single-crystal silicon in an oxide-lined trench. Buried collectors formed by ion implantation and in situ doped SEG silicon drastically reduce collector resistance with no detrimental effects on transistor performance. The emitter-base and collector-base ideality factors at 1.10 and 1.09, respectively, were very close to those of similar devices fabricated in the substrate in the same die, indicating excellent crystal quality of the SEG silicon. Due to the use of a trench structure to facilitate isolation and control the SEG thickness, the QDI process can be used for any application where the thickness and resistivity of the control and power areas are independently optimized.< > |
| doi_str_mv | 10.1109/16.85164 |
| format | Article |
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Using a combination of junction and dielectric isolation, the QDI-BJT was achieved by selective epitaxial growth (SEG) of single-crystal silicon in an oxide-lined trench. Buried collectors formed by ion implantation and in situ doped SEG silicon drastically reduce collector resistance with no detrimental effects on transistor performance. The emitter-base and collector-base ideality factors at 1.10 and 1.09, respectively, were very close to those of similar devices fabricated in the substrate in the same die, indicating excellent crystal quality of the SEG silicon. Due to the use of a trench structure to facilitate isolation and control the SEG thickness, the QDI process can be used for any application where the thickness and resistivity of the control and power areas are independently optimized.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.85164</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Control systems ; Costs ; Dielectric substrates ; Electronics ; Epitaxial growth ; Epitaxial layers ; Exact sciences and technology ; Logic circuits ; Logic devices ; Power integrated circuits ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Using a combination of junction and dielectric isolation, the QDI-BJT was achieved by selective epitaxial growth (SEG) of single-crystal silicon in an oxide-lined trench. Buried collectors formed by ion implantation and in situ doped SEG silicon drastically reduce collector resistance with no detrimental effects on transistor performance. The emitter-base and collector-base ideality factors at 1.10 and 1.09, respectively, were very close to those of similar devices fabricated in the substrate in the same die, indicating excellent crystal quality of the SEG silicon. Due to the use of a trench structure to facilitate isolation and control the SEG thickness, the QDI process can be used for any application where the thickness and resistivity of the control and power areas are independently optimized.< ></description><subject>Applied sciences</subject><subject>Control systems</subject><subject>Costs</subject><subject>Dielectric substrates</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Exact sciences and technology</subject><subject>Logic circuits</subject><subject>Logic devices</subject><subject>Power integrated circuits</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Thickness control</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqFkU1r3DAQhkVoINuk0GtvPpTSixONLanSsYR-QaAU0rOR5VE7QbG3GjnJ_vtqsyHXnDSSnvc5zCvEW5DnANJdgDm3Gow6EhvQ-lPrjDKvxEZKsK3rbX8iXjPf1KtRqtuIu1-rZ2onwoShZAo-pV1DvCRfcGpG2tYpNzfrHAotc1Oyn5m4LLm5p_K34XUMS9pn60v0496wD65M85-GKVGoKX600x02uKXiH3Zn4jj6xPjm6TwVv79-ub783l79_Pbj8vNVG3qjSzt2QU_oEeVoUetgPMIIECMo7aaoZAcmjqrDOCm0Mjr0wQUb7AhBKoz9qfhw8G7z8m9FLsMtccCU_IzLykPnJGjXmZdBq3tnpX4ZrJyS0lXw4wEMeWHOGIdtplufdwPIYV_VAGZ4rKqi75-cnmsBse44ED_zytnedVCxdweMEPH596D4Dzy_n00</recordid><startdate>19910701</startdate><enddate>19910701</enddate><creator>Gilbert, P.V.</creator><creator>Neudeck, G.W.</creator><creator>Denton, J.P.</creator><creator>Duey, S.J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19910701</creationdate><title>Quasi-dielectrically isolated bipolar junction transistor with subcollector fabricated using silicon selective epitaxy</title><author>Gilbert, P.V. ; Neudeck, G.W. ; Denton, J.P. ; Duey, S.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-b2c5deaee0b8e55c6ae1b11ff1459df40216fb42efd4e80f9eac9c8c8b1c04ef3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Applied sciences</topic><topic>Control systems</topic><topic>Costs</topic><topic>Dielectric substrates</topic><topic>Electronics</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>Exact sciences and technology</topic><topic>Logic circuits</topic><topic>Logic devices</topic><topic>Power integrated circuits</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Thickness control</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gilbert, P.V.</creatorcontrib><creatorcontrib>Neudeck, G.W.</creatorcontrib><creatorcontrib>Denton, J.P.</creatorcontrib><creatorcontrib>Duey, S.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gilbert, P.V.</au><au>Neudeck, G.W.</au><au>Denton, J.P.</au><au>Duey, S.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quasi-dielectrically isolated bipolar junction transistor with subcollector fabricated using silicon selective epitaxy</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1991-07-01</date><risdate>1991</risdate><volume>38</volume><issue>7</issue><spage>1660</spage><epage>1665</epage><pages>1660-1665</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A novel quasi-dielectrically isolated bipolar junction transistor (QDI-BJT) was developed for intelligent power ICs. Using a combination of junction and dielectric isolation, the QDI-BJT was achieved by selective epitaxial growth (SEG) of single-crystal silicon in an oxide-lined trench. Buried collectors formed by ion implantation and in situ doped SEG silicon drastically reduce collector resistance with no detrimental effects on transistor performance. The emitter-base and collector-base ideality factors at 1.10 and 1.09, respectively, were very close to those of similar devices fabricated in the substrate in the same die, indicating excellent crystal quality of the SEG silicon. Due to the use of a trench structure to facilitate isolation and control the SEG thickness, the QDI process can be used for any application where the thickness and resistivity of the control and power areas are independently optimized.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.85164</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1991-07, Vol.38 (7), p.1660-1665 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_16_85164 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Control systems Costs Dielectric substrates Electronics Epitaxial growth Epitaxial layers Exact sciences and technology Logic circuits Logic devices Power integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Thickness control Transistors |
| title | Quasi-dielectrically isolated bipolar junction transistor with subcollector fabricated using silicon selective epitaxy |
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