A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters
A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and...
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| Veröffentlicht in: | IEEE transactions on electron devices 1999-07, Vol.46 (7), p.1525-1531 |
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| container_end_page | 1531 |
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| container_issue | 7 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 46 |
| creator | Jouan, S. Planche, R. Baudry, H. Ribot, P. Chroboczek, J.A. Dutartre, D. Gloria, D. Laurens, M. Llinares, P. Marty, M. Monroy, A. Morin, C. Pantel, R. Perrotin, A. de Pontcharro, J. Regolini, J.L. Vincent, G. Chantre, A. |
| description | A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology. |
| doi_str_mv | 10.1109/16.772506 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_16_772506</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>772506</ieee_id><sourcerecordid>28304790</sourcerecordid><originalsourceid>FETCH-LOGICAL-c406t-24b8a81b0dbcc959327123a991ef81a3544a8909b8cfde3392c9a3d724190dbf3</originalsourceid><addsrcrecordid>eNqN0T1PwzAQBmALgUQpDKxMnkAMaX2xk_jGUvElITEAI4pc99IauXGIU0H-PUFFjIjpdLrnveVl7BTEBEDgFPJJUaSZyPfYCLKsSDBX-T4bCQE6QanlITuK8W1Yc6XSEXud8bVbrZPYEC25Dx8cphWvg4vEn9wt8burZ96RXdfBh1XPt9HVK06N68ynM973ifFuVQ_ZJvg-Ou9sqDltXNdRG4_ZQWV8pJOfOWYvN9fP87vk4fH2fj57SKwSeZekaqGNhoVYLqzFDGVaQCoNIlClwchMKaNR4ELbaklSYmrRyGWRKsAhU8kxu9j9bdrwvqXYlRsXLXlvagrbWCLgEJcZDPL8T5lqhEyj-geUQhUoBni5g7YNMbZUlU3rNqbtSxDldycl5OWuk8Ge7awjol_3c_wCTnKFzQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28304790</pqid></control><display><type>article</type><title>A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters</title><source>IEEE Electronic Library (IEL)</source><creator>Jouan, S. ; Planche, R. ; Baudry, H. ; Ribot, P. ; Chroboczek, J.A. ; Dutartre, D. ; Gloria, D. ; Laurens, M. ; Llinares, P. ; Marty, M. ; Monroy, A. ; Morin, C. ; Pantel, R. ; Perrotin, A. ; de Pontcharro, J. ; Regolini, J.L. ; Vincent, G. ; Chantre, A.</creator><creatorcontrib>Jouan, S. ; Planche, R. ; Baudry, H. ; Ribot, P. ; Chroboczek, J.A. ; Dutartre, D. ; Gloria, D. ; Laurens, M. ; Llinares, P. ; Marty, M. ; Monroy, A. ; Morin, C. ; Pantel, R. ; Perrotin, A. ; de Pontcharro, J. ; Regolini, J.L. ; Vincent, G. ; Chantre, A.</creatorcontrib><description>A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.772506</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Devices ; Emitters ; Epitaxy ; Germanium alloys ; Heterojunction bipolar transistors ; High speed ; Manufacturability ; Noise ; Silicon germanides</subject><ispartof>IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1525-1531</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-24b8a81b0dbcc959327123a991ef81a3544a8909b8cfde3392c9a3d724190dbf3</citedby><cites>FETCH-LOGICAL-c406t-24b8a81b0dbcc959327123a991ef81a3544a8909b8cfde3392c9a3d724190dbf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/772506$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/772506$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jouan, S.</creatorcontrib><creatorcontrib>Planche, R.</creatorcontrib><creatorcontrib>Baudry, H.</creatorcontrib><creatorcontrib>Ribot, P.</creatorcontrib><creatorcontrib>Chroboczek, J.A.</creatorcontrib><creatorcontrib>Dutartre, D.</creatorcontrib><creatorcontrib>Gloria, D.</creatorcontrib><creatorcontrib>Laurens, M.</creatorcontrib><creatorcontrib>Llinares, P.</creatorcontrib><creatorcontrib>Marty, M.</creatorcontrib><creatorcontrib>Monroy, A.</creatorcontrib><creatorcontrib>Morin, C.</creatorcontrib><creatorcontrib>Pantel, R.</creatorcontrib><creatorcontrib>Perrotin, A.</creatorcontrib><creatorcontrib>de Pontcharro, J.</creatorcontrib><creatorcontrib>Regolini, J.L.</creatorcontrib><creatorcontrib>Vincent, G.</creatorcontrib><creatorcontrib>Chantre, A.</creatorcontrib><title>A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.</description><subject>Devices</subject><subject>Emitters</subject><subject>Epitaxy</subject><subject>Germanium alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>High speed</subject><subject>Manufacturability</subject><subject>Noise</subject><subject>Silicon germanides</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0T1PwzAQBmALgUQpDKxMnkAMaX2xk_jGUvElITEAI4pc99IauXGIU0H-PUFFjIjpdLrnveVl7BTEBEDgFPJJUaSZyPfYCLKsSDBX-T4bCQE6QanlITuK8W1Yc6XSEXud8bVbrZPYEC25Dx8cphWvg4vEn9wt8burZ96RXdfBh1XPt9HVK06N68ynM973ifFuVQ_ZJvg-Ou9sqDltXNdRG4_ZQWV8pJOfOWYvN9fP87vk4fH2fj57SKwSeZekaqGNhoVYLqzFDGVaQCoNIlClwchMKaNR4ELbaklSYmrRyGWRKsAhU8kxu9j9bdrwvqXYlRsXLXlvagrbWCLgEJcZDPL8T5lqhEyj-geUQhUoBni5g7YNMbZUlU3rNqbtSxDldycl5OWuk8Ge7awjol_3c_wCTnKFzQ</recordid><startdate>19990701</startdate><enddate>19990701</enddate><creator>Jouan, S.</creator><creator>Planche, R.</creator><creator>Baudry, H.</creator><creator>Ribot, P.</creator><creator>Chroboczek, J.A.</creator><creator>Dutartre, D.</creator><creator>Gloria, D.</creator><creator>Laurens, M.</creator><creator>Llinares, P.</creator><creator>Marty, M.</creator><creator>Monroy, A.</creator><creator>Morin, C.</creator><creator>Pantel, R.</creator><creator>Perrotin, A.</creator><creator>de Pontcharro, J.</creator><creator>Regolini, J.L.</creator><creator>Vincent, G.</creator><creator>Chantre, A.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>19990701</creationdate><title>A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters</title><author>Jouan, S. ; Planche, R. ; Baudry, H. ; Ribot, P. ; Chroboczek, J.A. ; Dutartre, D. ; Gloria, D. ; Laurens, M. ; Llinares, P. ; Marty, M. ; Monroy, A. ; Morin, C. ; Pantel, R. ; Perrotin, A. ; de Pontcharro, J. ; Regolini, J.L. ; Vincent, G. ; Chantre, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-24b8a81b0dbcc959327123a991ef81a3544a8909b8cfde3392c9a3d724190dbf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Devices</topic><topic>Emitters</topic><topic>Epitaxy</topic><topic>Germanium alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>High speed</topic><topic>Manufacturability</topic><topic>Noise</topic><topic>Silicon germanides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jouan, S.</creatorcontrib><creatorcontrib>Planche, R.</creatorcontrib><creatorcontrib>Baudry, H.</creatorcontrib><creatorcontrib>Ribot, P.</creatorcontrib><creatorcontrib>Chroboczek, J.A.</creatorcontrib><creatorcontrib>Dutartre, D.</creatorcontrib><creatorcontrib>Gloria, D.</creatorcontrib><creatorcontrib>Laurens, M.</creatorcontrib><creatorcontrib>Llinares, P.</creatorcontrib><creatorcontrib>Marty, M.</creatorcontrib><creatorcontrib>Monroy, A.</creatorcontrib><creatorcontrib>Morin, C.</creatorcontrib><creatorcontrib>Pantel, R.</creatorcontrib><creatorcontrib>Perrotin, A.</creatorcontrib><creatorcontrib>de Pontcharro, J.</creatorcontrib><creatorcontrib>Regolini, J.L.</creatorcontrib><creatorcontrib>Vincent, G.</creatorcontrib><creatorcontrib>Chantre, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jouan, S.</au><au>Planche, R.</au><au>Baudry, H.</au><au>Ribot, P.</au><au>Chroboczek, J.A.</au><au>Dutartre, D.</au><au>Gloria, D.</au><au>Laurens, M.</au><au>Llinares, P.</au><au>Marty, M.</au><au>Monroy, A.</au><au>Morin, C.</au><au>Pantel, R.</au><au>Perrotin, A.</au><au>de Pontcharro, J.</au><au>Regolini, J.L.</au><au>Vincent, G.</au><au>Chantre, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1999-07-01</date><risdate>1999</risdate><volume>46</volume><issue>7</issue><spage>1525</spage><epage>1531</epage><pages>1525-1531</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.</abstract><pub>IEEE</pub><doi>10.1109/16.772506</doi><tpages>7</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Devices Emitters Epitaxy Germanium alloys Heterojunction bipolar transistors High speed Manufacturability Noise Silicon germanides |
| title | A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T22%3A40%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20high-speed%20low%201/f%20noise%20SiGe%20HBT%20technology%20using%20epitaxially-aligned%20polysilicon%20emitters&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Jouan,%20S.&rft.date=1999-07-01&rft.volume=46&rft.issue=7&rft.spage=1525&rft.epage=1531&rft.pages=1525-1531&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.772506&rft_dat=%3Cproquest_RIE%3E28304790%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28304790&rft_id=info:pmid/&rft_ieee_id=772506&rfr_iscdi=true |