The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug vias
This paper describes a new failure mechanism in W-plug vias, and the process conditions which enhance it. For submicron technologies, the limiting factor in interconnect reliability performance is increasingly dominated by the electromigration resistance of tungsten-plug vias. We have observed that...
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| Veröffentlicht in: | IEEE transactions on electron devices 1997-12, Vol.44 (12), p.2213-2219 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 44 |
| creator | Walls, J.A. |
| description | This paper describes a new failure mechanism in W-plug vias, and the process conditions which enhance it. For submicron technologies, the limiting factor in interconnect reliability performance is increasingly dominated by the electromigration resistance of tungsten-plug vias. We have observed that under certain experimental conditions, early electromigration failures can be induced in via-chain test structures. We have demonstrated that these are caused by stress-induced void formation in the metal line immediately beneath the tungsten plug. This is thought to be due to highly localized film stress around the base of the plug, which can be minimized by increasing the thickness of the TiN anti-reflective coating (ARC). This has the effect of reducing the incidence of early failure by suppressing the stress-induced failures. |
| doi_str_mv | 10.1109/16.644639 |
| format | Article |
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This has the effect of reducing the incidence of early failure by suppressing the stress-induced failures.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.644639</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Automatic testing ; Coatings ; Current density ; Electromigration ; Plugs ; Stress ; System testing ; Tin ; Tungsten</subject><ispartof>IEEE transactions on electron devices, 1997-12, Vol.44 (12), p.2213-2219</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c308t-6cd066a20b0e247b482f53f3d5d5e260c395c0c171297cd89499676813a4d2683</citedby><cites>FETCH-LOGICAL-c308t-6cd066a20b0e247b482f53f3d5d5e260c395c0c171297cd89499676813a4d2683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/644639$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/644639$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Walls, J.A.</creatorcontrib><title>The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug vias</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This paper describes a new failure mechanism in W-plug vias, and the process conditions which enhance it. For submicron technologies, the limiting factor in interconnect reliability performance is increasingly dominated by the electromigration resistance of tungsten-plug vias. We have observed that under certain experimental conditions, early electromigration failures can be induced in via-chain test structures. We have demonstrated that these are caused by stress-induced void formation in the metal line immediately beneath the tungsten plug. This is thought to be due to highly localized film stress around the base of the plug, which can be minimized by increasing the thickness of the TiN anti-reflective coating (ARC). This has the effect of reducing the incidence of early failure by suppressing the stress-induced failures.</description><subject>Aluminum</subject><subject>Automatic testing</subject><subject>Coatings</subject><subject>Current density</subject><subject>Electromigration</subject><subject>Plugs</subject><subject>Stress</subject><subject>System testing</subject><subject>Tin</subject><subject>Tungsten</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqF0D1PwzAQBmALgUQpDKxMnpAYUvyViz1WEV9SBRIqA1OU2pfWkDolTirx7wlKxcp0d3of3fAScsnZjHNmbjnMQCmQ5ohMeJpmiQEFx2TCGNeJkVqekrMYP4ZzYGJC3pcbpD5UdY_BIm0quvTPdP6a027j7WfAGGkTaOzaYUt8cL1FR_eNd7Rq2m3Z-SH1gXZ9WMcOQ7Kr-zXd-zKek5OqrCNeHOaUvN3fLfPHZPHy8JTPF4mVTHcJWMcASsFWDIXKVkqLKpWVdKlLUQCz0qSWWZ5xYTLrtFHGQAaay1I5AVpOyfX4d9c2Xz3Grtj6aLGuy4BNHwuhhzaEMv_DTEhgBgZ4M0LbNjG2WBW71m_L9rvgrPhtueBQjC0P9mq0HhH_3CH8AbGsdgk</recordid><startdate>19971201</startdate><enddate>19971201</enddate><creator>Walls, J.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19971201</creationdate><title>The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug vias</title><author>Walls, J.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-6cd066a20b0e247b482f53f3d5d5e260c395c0c171297cd89499676813a4d2683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Aluminum</topic><topic>Automatic testing</topic><topic>Coatings</topic><topic>Current density</topic><topic>Electromigration</topic><topic>Plugs</topic><topic>Stress</topic><topic>System testing</topic><topic>Tin</topic><topic>Tungsten</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Walls, J.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Walls, J.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug vias</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1997-12-01</date><risdate>1997</risdate><volume>44</volume><issue>12</issue><spage>2213</spage><epage>2219</epage><pages>2213-2219</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This paper describes a new failure mechanism in W-plug vias, and the process conditions which enhance it. For submicron technologies, the limiting factor in interconnect reliability performance is increasingly dominated by the electromigration resistance of tungsten-plug vias. We have observed that under certain experimental conditions, early electromigration failures can be induced in via-chain test structures. We have demonstrated that these are caused by stress-induced void formation in the metal line immediately beneath the tungsten plug. This is thought to be due to highly localized film stress around the base of the plug, which can be minimized by increasing the thickness of the TiN anti-reflective coating (ARC). This has the effect of reducing the incidence of early failure by suppressing the stress-induced failures.</abstract><pub>IEEE</pub><doi>10.1109/16.644639</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1997-12, Vol.44 (12), p.2213-2219 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum Automatic testing Coatings Current density Electromigration Plugs Stress System testing Tin Tungsten |
| title | The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug vias |
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