On the very-high-current degradations on Si n-p-n transistors
The stressing of 0.8- mu m double-poly self-aligned Si n-p-n transistors at current densities up to 12.5 mA/ mu m/sup 2/ is discussed. The emitter contact does not fail abruptly; rather, its contact resistance drifts gradually. The contact resistance increases when the current flows out of the emitt...
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| Veröffentlicht in: | IEEE transactions on electron devices 1990-07, Vol.37 (7), p.1698-1706 |
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| container_end_page | 1706 |
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| container_issue | 7 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 37 |
| creator | Tang, D.D.-L. Hackbarth, E. Chen, T.-C. |
| description | The stressing of 0.8- mu m double-poly self-aligned Si n-p-n transistors at current densities up to 12.5 mA/ mu m/sup 2/ is discussed. The emitter contact does not fail abruptly; rather, its contact resistance drifts gradually. The contact resistance increases when the current flows out of the emitter and decreases when the current is reversed. The drift in emitter resistance can be thermally accelerated and is consistent with the electromigration phenomenon. The emitter-base junction shows negligible degradation when stressed in normal-mode operation, i.e. the current flows out of the emitter. However, the junction degrades when stressed with open collector or when stressed in inverse mode. The annealing experiments show that the junction degradation results from the interface-state generation. However, the drift in contact resistance cannot be recovered by annealing. The causes of junction degradation are suggested.< > |
| doi_str_mv | 10.1109/16.55757 |
| format | Article |
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The emitter contact does not fail abruptly; rather, its contact resistance drifts gradually. The contact resistance increases when the current flows out of the emitter and decreases when the current is reversed. The drift in emitter resistance can be thermally accelerated and is consistent with the electromigration phenomenon. The emitter-base junction shows negligible degradation when stressed in normal-mode operation, i.e. the current flows out of the emitter. However, the junction degrades when stressed with open collector or when stressed in inverse mode. The annealing experiments show that the junction degradation results from the interface-state generation. However, the drift in contact resistance cannot be recovered by annealing. The causes of junction degradation are suggested.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.55757</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acceleration ; Annealing ; Applied sciences ; Bipolar transistors ; Contact resistance ; Current density ; Electromigration ; Electronics ; Exact sciences and technology ; Modems ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The emitter contact does not fail abruptly; rather, its contact resistance drifts gradually. The contact resistance increases when the current flows out of the emitter and decreases when the current is reversed. The drift in emitter resistance can be thermally accelerated and is consistent with the electromigration phenomenon. The emitter-base junction shows negligible degradation when stressed in normal-mode operation, i.e. the current flows out of the emitter. However, the junction degrades when stressed with open collector or when stressed in inverse mode. The annealing experiments show that the junction degradation results from the interface-state generation. However, the drift in contact resistance cannot be recovered by annealing. The causes of junction degradation are suggested.< ></description><subject>Acceleration</subject><subject>Annealing</subject><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>Contact resistance</subject><subject>Current density</subject><subject>Electromigration</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Modems</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stress</topic><topic>Thermal degradation</topic><topic>Thermal resistance</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tang, D.D.-L.</creatorcontrib><creatorcontrib>Hackbarth, E.</creatorcontrib><creatorcontrib>Chen, T.-C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tang, D.D.-L.</au><au>Hackbarth, E.</au><au>Chen, T.-C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the very-high-current degradations on Si n-p-n transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1990-07-01</date><risdate>1990</risdate><volume>37</volume><issue>7</issue><spage>1698</spage><epage>1706</epage><pages>1698-1706</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The stressing of 0.8- mu m double-poly self-aligned Si n-p-n transistors at current densities up to 12.5 mA/ mu m/sup 2/ is discussed. The emitter contact does not fail abruptly; rather, its contact resistance drifts gradually. The contact resistance increases when the current flows out of the emitter and decreases when the current is reversed. The drift in emitter resistance can be thermally accelerated and is consistent with the electromigration phenomenon. The emitter-base junction shows negligible degradation when stressed in normal-mode operation, i.e. the current flows out of the emitter. However, the junction degrades when stressed with open collector or when stressed in inverse mode. The annealing experiments show that the junction degradation results from the interface-state generation. However, the drift in contact resistance cannot be recovered by annealing. The causes of junction degradation are suggested.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.55757</doi><tpages>9</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acceleration Annealing Applied sciences Bipolar transistors Contact resistance Current density Electromigration Electronics Exact sciences and technology Modems Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Thermal degradation Thermal resistance Transistors |
| title | On the very-high-current degradations on Si n-p-n transistors |
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