Characterization of layout dependent thermal coupling in SOI CMOS current mirrors

A current mirror is proposed as a suitable structure for the characterization of layout dependent thermal coupling between MOSFETs. Using current and voltage measurements, and compensating for series resistance effects, very small changes in local device temperature can be made visible. For the firs...

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Veröffentlicht in:	IEEE transactions on electron devices 1996-12, Vol.43 (12), p.2227-2232
Hauptverfasser:	Tenbroek, B.M., Redman-White, W., Lee, M.S.L., Bunyan, R.J.T., Uren, M.J., Brunson, K.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit simulation CMOS technology Coupling circuits Electrical resistance measurement Mirrors MOSFETs Semiconductor device modeling SPICE Temperature Voltage measurement
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