Conductivity properties of narrow-channel polysilicon thin-film transistors

The effect of the narrow channel width on performance of thin-film transistors (TFTs) is evaluated. To this end, the authors fabricated coplanar, n-channel TFTs with a fixed gate length of 20 mu m and channel widths ranging from 20 mu m to half a micrometer. The dependences of threshold voltage, gra...

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Veröffentlicht in:	IEEE transactions on electron devices 1989-11, Vol.36 (11), p.2622-2623
Hauptverfasser:	Yamauchi, N., Hajjar, J.-J.J., Reif, R., Nakazawa, K., Tanaka, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductivity Density measurement Thin film transistors Threshold voltage Transconductance
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