Delay time studies and electron mobility measurement in a-Si:H TFT

The time delay in the drain current response to a step in the effective drive voltage was studied as one of the key parameters in characterizing the dynamic response of an a-Si:H thin-film transistor (TFT). It was determined that the a-Si:H delay time shows a similar behavior to that observed in a S...

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Veröffentlicht in:	IEEE transactions on electron devices 1989-12, Vol.36 (12), p.2944-2948
Hauptverfasser:	Bashir, R., Subramanian, C.K., Neudeck, G.W., Chung, K.Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Delay effects Electric variables measurement Electron mobility Electronics Exact sciences and technology FETs MOSFET circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors Threshold voltage Time measurement Transistors Transmission line measurements
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