Off-state breakdown in InAlAs/InGaAs MODFET's

Recent efforts are being focussed on improving the breakdown voltage (BV) of InAlAs/InGaAs MODFET's on InP towards high-power applications. A detailed understanding of the physics of breakdown in these devices is still lacking. In this paper, we carry out a study of off-state breakdown on state...

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Veröffentlicht in:	IEEE transactions on electron devices 1995-01, Vol.42 (1), p.15-22
Hauptverfasser:	Bahl, S.R., del Alamo, J.A., Dickmann, J., Schildberg, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Dielectrics and electrical insulation Electric breakdown Electron emission Electronics Exact sciences and technology HEMTs Indium compounds Indium gallium arsenide Indium phosphide MODFETs Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Transistors
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