Off-state breakdown in InAlAs/InGaAs MODFET's
Recent efforts are being focussed on improving the breakdown voltage (BV) of InAlAs/InGaAs MODFET's on InP towards high-power applications. A detailed understanding of the physics of breakdown in these devices is still lacking. In this paper, we carry out a study of off-state breakdown on state...
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| Veröffentlicht in: | IEEE transactions on electron devices 1995-01, Vol.42 (1), p.15-22 |
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| container_title | IEEE transactions on electron devices |
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| creator | Bahl, S.R. del Alamo, J.A. Dickmann, J. Schildberg, S. |
| description | Recent efforts are being focussed on improving the breakdown voltage (BV) of InAlAs/InGaAs MODFET's on InP towards high-power applications. A detailed understanding of the physics of breakdown in these devices is still lacking. In this paper, we carry out a study of off-state breakdown on state-of-the-art MODFET's in this material system. Through a combination of a surface-depleted cap and mesa-sidewall isolation the devices have BV's of around 10 V. We find that BV shows a negative temperature coefficient and also decreases with a higher InAs mole fraction in the channel. As we have recently found in InAlAs/n/sup +/-InGaAs HFET's, off-state breakdown appears to be a two-step process. First, electrons are emitted by thermionic-field emission from the gate to the insulator. Second, as a consequence of the large electric field in the insulator and the substantial /spl Delta/E/sub C/ between insulator and channel, they enter the channel hot, into the high-field drain-gate region, and relax their energy through impact-ionization. This combined hypothesis is able to explain why the MODFET breakdown voltage depends on both channel and insulator design parameters.< > |
| doi_str_mv | 10.1109/16.370041 |
| format | Article |
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A detailed understanding of the physics of breakdown in these devices is still lacking. In this paper, we carry out a study of off-state breakdown on state-of-the-art MODFET's in this material system. Through a combination of a surface-depleted cap and mesa-sidewall isolation the devices have BV's of around 10 V. We find that BV shows a negative temperature coefficient and also decreases with a higher InAs mole fraction in the channel. As we have recently found in InAlAs/n/sup +/-InGaAs HFET's, off-state breakdown appears to be a two-step process. First, electrons are emitted by thermionic-field emission from the gate to the insulator. Second, as a consequence of the large electric field in the insulator and the substantial /spl Delta/E/sub C/ between insulator and channel, they enter the channel hot, into the high-field drain-gate region, and relax their energy through impact-ionization. This combined hypothesis is able to explain why the MODFET breakdown voltage depends on both channel and insulator design parameters.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.370041</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Dielectrics and electrical insulation ; Electric breakdown ; Electron emission ; Electronics ; Exact sciences and technology ; HEMTs ; Indium compounds ; Indium gallium arsenide ; Indium phosphide ; MODFETs ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. 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A detailed understanding of the physics of breakdown in these devices is still lacking. In this paper, we carry out a study of off-state breakdown on state-of-the-art MODFET's in this material system. Through a combination of a surface-depleted cap and mesa-sidewall isolation the devices have BV's of around 10 V. We find that BV shows a negative temperature coefficient and also decreases with a higher InAs mole fraction in the channel. As we have recently found in InAlAs/n/sup +/-InGaAs HFET's, off-state breakdown appears to be a two-step process. First, electrons are emitted by thermionic-field emission from the gate to the insulator. Second, as a consequence of the large electric field in the insulator and the substantial /spl Delta/E/sub C/ between insulator and channel, they enter the channel hot, into the high-field drain-gate region, and relax their energy through impact-ionization. This combined hypothesis is able to explain why the MODFET breakdown voltage depends on both channel and insulator design parameters.< ></description><subject>Applied sciences</subject><subject>Dielectrics and electrical insulation</subject><subject>Electric breakdown</subject><subject>Electron emission</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>HEMTs</subject><subject>Indium compounds</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>MODFETs</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNpFkD1PwzAQhi0EEuVjYGXKgEAMbv0Vxx6jAqVSUReYratzlgJpUuxUiH9PUCqYTnfvc8_wEnLF2ZRzZmdcT2XBmOJHZMLzvKBWK31MJoxxQ6008pScpfQ-rFopMSF0HQJNPfSYbSLCR9V9tVndZsu2bMo0W7YLKFP2sn54eny9SxfkJECT8PIwz8nbcJ8_09V6sZyXK-plIXrqAY0MHis0lnEGGtCaHKXwQVowGkWFKvceQfO8KIrNRplgIVghFGpeyXNyO3p3sfvcY-rdtk4emwZa7PbJCSOsZsYO4P0I-tilFDG4Xay3EL8dZ-63EMe1GwsZ2JuDFJKHJkRofZ3-HqQarLkZsOsRqxHxPx0dPxb5ZVo</recordid><startdate>199501</startdate><enddate>199501</enddate><creator>Bahl, S.R.</creator><creator>del Alamo, J.A.</creator><creator>Dickmann, J.</creator><creator>Schildberg, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>199501</creationdate><title>Off-state breakdown in InAlAs/InGaAs MODFET's</title><author>Bahl, S.R. ; del Alamo, J.A. ; Dickmann, J. ; Schildberg, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-cae83fcede89010a6ae985e32cf39a86e2de45ccea615777bb48f9af9224e61d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Applied sciences</topic><topic>Dielectrics and electrical insulation</topic><topic>Electric breakdown</topic><topic>Electron emission</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>HEMTs</topic><topic>Indium compounds</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>MODFETs</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bahl, S.R.</creatorcontrib><creatorcontrib>del Alamo, J.A.</creatorcontrib><creatorcontrib>Dickmann, J.</creatorcontrib><creatorcontrib>Schildberg, S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bahl, S.R.</au><au>del Alamo, J.A.</au><au>Dickmann, J.</au><au>Schildberg, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Off-state breakdown in InAlAs/InGaAs MODFET's</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1995-01</date><risdate>1995</risdate><volume>42</volume><issue>1</issue><spage>15</spage><epage>22</epage><pages>15-22</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Recent efforts are being focussed on improving the breakdown voltage (BV) of InAlAs/InGaAs MODFET's on InP towards high-power applications. A detailed understanding of the physics of breakdown in these devices is still lacking. In this paper, we carry out a study of off-state breakdown on state-of-the-art MODFET's in this material system. Through a combination of a surface-depleted cap and mesa-sidewall isolation the devices have BV's of around 10 V. We find that BV shows a negative temperature coefficient and also decreases with a higher InAs mole fraction in the channel. As we have recently found in InAlAs/n/sup +/-InGaAs HFET's, off-state breakdown appears to be a two-step process. First, electrons are emitted by thermionic-field emission from the gate to the insulator. Second, as a consequence of the large electric field in the insulator and the substantial /spl Delta/E/sub C/ between insulator and channel, they enter the channel hot, into the high-field drain-gate region, and relax their energy through impact-ionization. This combined hypothesis is able to explain why the MODFET breakdown voltage depends on both channel and insulator design parameters.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.370041</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1995-01, Vol.42 (1), p.15-22 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Dielectrics and electrical insulation Electric breakdown Electron emission Electronics Exact sciences and technology HEMTs Indium compounds Indium gallium arsenide Indium phosphide MODFETs Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Transistors |
| title | Off-state breakdown in InAlAs/InGaAs MODFET's |
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