Thermal analysis of solid-state devices using the boundary element method

Thermal analysis of solid-state devices using the boundary element method

Thermal analysis of two-dimensional and three-dimensional two-layer device structures have been carried out using the boundary element method (BEM). The resulting thermal profiles for two different device structures agree very well with those obtained using analytical solutions. This agreement indic...

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Veröffentlicht in:IEEE transactions on electron devices 1988-07, Vol.35 (7), p.1151-1153
Hauptverfasser: Lee, C.C., Palisoc, A.L., Baynham, J.M.W.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Boundary element methods
CMOS technology
Electron devices
Electronics
Exact sciences and technology
Geometrical optics
Implants
Miscellaneous
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid state circuits
Stress
Surface resistance
Voltage
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Zusammenfassung:Thermal analysis of two-dimensional and three-dimensional two-layer device structures have been carried out using the boundary element method (BEM). The resulting thermal profiles for two different device structures agree very well with those obtained using analytical solutions. This agreement indicates not only the accuracy of the BEM but also the correct derivation of the analytical solutions.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.3380