Short channel threshold dependence of the inversion channel heterostructure field effect transistor
The threshold voltage dependence on the channel length for the inversion channel HFET is investigated. Modifying the charge equations to account for source and drain depletion into the channel region yields a length dependent threshold voltage equation. It is shown theoretically that the threshold m...
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| Veröffentlicht in: | IEEE transactions on electron devices 1994-10, Vol.41 (10), p.1871-1873 |
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| container_end_page | 1873 |
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| container_issue | 10 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 41 |
| creator | Taylor, G.W. Kiely, P.A. |
| description | The threshold voltage dependence on the channel length for the inversion channel HFET is investigated. Modifying the charge equations to account for source and drain depletion into the channel region yields a length dependent threshold voltage equation. It is shown theoretically that the threshold may increase or decrease with decreasing gate length as the doping parameters are changed, which is supported by experiment. Using the new threshold equation parameters have been found which should allow length invariant thresholds.< > |
| doi_str_mv | 10.1109/16.324602 |
| format | Article |
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Modifying the charge equations to account for source and drain depletion into the channel region yields a length dependent threshold voltage equation. It is shown theoretically that the threshold may increase or decrease with decreasing gate length as the doping parameters are changed, which is supported by experiment. Using the new threshold equation parameters have been found which should allow length invariant thresholds.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.324602</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping ; Equations ; FETs ; HEMTs ; Heterojunctions ; MODFETs ; Optoelectronic devices ; P-n junctions ; Semiconductor process modeling ; Threshold voltage</subject><ispartof>IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1871-1873</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/324602$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/324602$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Taylor, G.W.</creatorcontrib><creatorcontrib>Kiely, P.A.</creatorcontrib><title>Short channel threshold dependence of the inversion channel heterostructure field effect transistor</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The threshold voltage dependence on the channel length for the inversion channel HFET is investigated. Modifying the charge equations to account for source and drain depletion into the channel region yields a length dependent threshold voltage equation. It is shown theoretically that the threshold may increase or decrease with decreasing gate length as the doping parameters are changed, which is supported by experiment. Using the new threshold equation parameters have been found which should allow length invariant thresholds.< ></description><subject>Doping</subject><subject>Equations</subject><subject>FETs</subject><subject>HEMTs</subject><subject>Heterojunctions</subject><subject>MODFETs</subject><subject>Optoelectronic devices</subject><subject>P-n junctions</subject><subject>Semiconductor process modeling</subject><subject>Threshold voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqF0TtPwzAQAGALgUQpDKxMmZAYUvx2PKKKl1SJAZgjxzkrQaldbAeJf09Qqq6dTnf33Q13CF0TvCIE63siV4xyiekJWhAhVKkll6dogTGpSs0qdo4uUvqaUsk5XSD73oWYC9sZ72EochchdWFoixZ24FvwForgpjoUvf-BmPrgD7qDDDGkHEebxwiF62GaBOfA5iJH41OfcoiX6MyZIcHVPi7R59Pjx_ql3Lw9v64fNqWlWufSOqtxY6rKaeoo1a2SonFCVlJiKxS3VjUOjLDcYXCkaSlhTLdGKUJ441q2RLfz3l0M3yOkXG_7ZGEYjIcwpppqzCol6HFYSYo1ZcehFAJLwid4N0M73SNFcPUu9lsTf2uC6__H1ETW82MmezPbHgAObt_8AxE9inQ</recordid><startdate>19941001</startdate><enddate>19941001</enddate><creator>Taylor, G.W.</creator><creator>Kiely, P.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19941001</creationdate><title>Short channel threshold dependence of the inversion channel heterostructure field effect transistor</title><author>Taylor, G.W. ; Kiely, P.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c299t-cfc90ba88f92f229d765bf568660c574cc7bfea5c4f0ef1bd21339da77114bfd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Doping</topic><topic>Equations</topic><topic>FETs</topic><topic>HEMTs</topic><topic>Heterojunctions</topic><topic>MODFETs</topic><topic>Optoelectronic devices</topic><topic>P-n junctions</topic><topic>Semiconductor process modeling</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Taylor, G.W.</creatorcontrib><creatorcontrib>Kiely, P.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taylor, G.W.</au><au>Kiely, P.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Short channel threshold dependence of the inversion channel heterostructure field effect transistor</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1994-10-01</date><risdate>1994</risdate><volume>41</volume><issue>10</issue><spage>1871</spage><epage>1873</epage><pages>1871-1873</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The threshold voltage dependence on the channel length for the inversion channel HFET is investigated. Modifying the charge equations to account for source and drain depletion into the channel region yields a length dependent threshold voltage equation. It is shown theoretically that the threshold may increase or decrease with decreasing gate length as the doping parameters are changed, which is supported by experiment. Using the new threshold equation parameters have been found which should allow length invariant thresholds.< ></abstract><pub>IEEE</pub><doi>10.1109/16.324602</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1871-1873 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_16_324602 |
| source | IEEE Electronic Library (IEL) |
| subjects | Doping Equations FETs HEMTs Heterojunctions MODFETs Optoelectronic devices P-n junctions Semiconductor process modeling Threshold voltage |
| title | Short channel threshold dependence of the inversion channel heterostructure field effect transistor |
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