SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

SiC/Si heterojunction diodes have been fabricated by two different rapid thermal chemical vapor deposition (RTCVD) processes: a localized self-selective growth and blanket growth. The self-selective growth of crystalline cubic (/spl beta/) SiC was obtained by propane carbonization of the Si substrat...

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Veröffentlicht in:	IEEE transactions on electron devices 1994-03, Vol.41 (3), p.281-287
Hauptverfasser:	Yih, P.H., Li, J.P., Steckl, A.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	426000 - Engineering- Components, Electron Devices & Circuits- (1990-) Applied sciences CARBIDES CARBON COMPOUNDS CHEMICAL COATING CHEMICAL VAPOR DEPOSITION Crystallization DATA DEPOSITION Diodes ELECTRICAL PROPERTIES Electronics ELEMENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Heterojunctions INFORMATION NUMERICAL DATA PHYSICAL PROPERTIES Rapid thermal processing SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films SEMIMETALS SILICON Silicon carbide SILICON CARBIDES SILICON COMPOUNDS Substrates SURFACE COATING Thermal conductivity
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