A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles

A highly reliable nonvolatile memory device suitable for high-density electrically erasable and programmable read only memories (EEPROMs) is described. A metal-oxide-nitride-oxide-semiconductor (MONOS) structure whose top oxide is fabricated by chemical vapor deposition (CVD) on the nitride is propo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 1993-11, Vol.40 (11), p.2011-2017
Hauptverfasser:	Minami, S.-i., Kamigaki, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Capacitance Chemical vapor deposition Degradation EPROM MONOS devices MOS devices Nonvolatile memory PROM Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!