Integrated electronic shutter for back-illuminated charge-coupled devices
A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n/sup...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 1993-07, Vol.40 (7), p.1231-1237 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1237 |
|---|---|
| container_issue | 7 |
| container_start_page | 1231 |
| container_title | IEEE transactions on electron devices |
| container_volume | 40 |
| creator | Reich, R.K. Mountain, R.W. McGonagle, W.H. Huang, J.C.-M. Twichell, J.C. Kosicki, B.B. Savoye, E.D. |
| description | A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n/sup +/ shutter drain placed in the vertical channel stop regions and stepped p-type buried layers formed by a high-energy implantation (1.0-1.5 MeV) located between the CCD n-type buried channel the and p substrate. These structures create electric fields that direct the photoelectrons to either the CCD detection region or the n/sup +/ shutter drain. The ratio of photons detected with the shutter open to photons detected with the shutter closed has been measured to be greater than 75000 for wavelengths below 540 nm. The corresponding shutter rise and fall times are less than 55 ns.< > |
| doi_str_mv | 10.1109/16.216426 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_16_216426</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>216426</ieee_id><sourcerecordid>28478484</sourcerecordid><originalsourceid>FETCH-LOGICAL-c306t-cb757dab2bb267cebff6c98d1687fe7342dcb7b6534938fa0058a89b37329d193</originalsourceid><addsrcrecordid>eNo9kE1LxDAQhoMouK4evHrqQQQPXfPVJD2K-LGw4EXPJUknu9Fsuyap4L-32mVPw8s88zC8CF0SvCAE13dELCgRnIojNCNVJctacHGMZhgTVdZMsVN0ltLHGAXndIaWyy7DOuoMbQEBbI59522RNkPOEAvXx8Jo-1n6EIat7_45u9FxDaXth10YYwvf3kI6RydOhwQX-zlH70-Pbw8v5er1eflwvyotwyKX1shKttpQY6iQFoxzwtaqJUJJB5Jx2o6IERXj47tOY1wprWrDJKN1S2o2RzeTdxf7rwFSbrY-WQhBd9APqaGKS8UVH8HbCbSxTymCa3bRb3X8aQhu_spqiGimskb2ei_Vyergou6sT4cDrrCgFR2xqwnzAHDY7h2_YbJxlg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28478484</pqid></control><display><type>article</type><title>Integrated electronic shutter for back-illuminated charge-coupled devices</title><source>IEEE Xplore</source><creator>Reich, R.K. ; Mountain, R.W. ; McGonagle, W.H. ; Huang, J.C.-M. ; Twichell, J.C. ; Kosicki, B.B. ; Savoye, E.D.</creator><creatorcontrib>Reich, R.K. ; Mountain, R.W. ; McGonagle, W.H. ; Huang, J.C.-M. ; Twichell, J.C. ; Kosicki, B.B. ; Savoye, E.D.</creatorcontrib><description>A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n/sup +/ shutter drain placed in the vertical channel stop regions and stepped p-type buried layers formed by a high-energy implantation (1.0-1.5 MeV) located between the CCD n-type buried channel the and p substrate. These structures create electric fields that direct the photoelectrons to either the CCD detection region or the n/sup +/ shutter drain. The ratio of photons detected with the shutter open to photons detected with the shutter closed has been measured to be greater than 75000 for wavelengths below 540 nm. The corresponding shutter rise and fall times are less than 55 ns.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.216426</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Charge coupled devices ; Charge transfer devices ; Electronics ; Exact sciences and technology ; Force sensors ; High speed optical techniques ; Integrated optics ; Jamming ; Optical arrays ; Optical devices ; Photodetectors ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solid state circuits ; Wavelength measurement</subject><ispartof>IEEE transactions on electron devices, 1993-07, Vol.40 (7), p.1231-1237</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-cb757dab2bb267cebff6c98d1687fe7342dcb7b6534938fa0058a89b37329d193</citedby><cites>FETCH-LOGICAL-c306t-cb757dab2bb267cebff6c98d1687fe7342dcb7b6534938fa0058a89b37329d193</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/216426$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/216426$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4806252$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Reich, R.K.</creatorcontrib><creatorcontrib>Mountain, R.W.</creatorcontrib><creatorcontrib>McGonagle, W.H.</creatorcontrib><creatorcontrib>Huang, J.C.-M.</creatorcontrib><creatorcontrib>Twichell, J.C.</creatorcontrib><creatorcontrib>Kosicki, B.B.</creatorcontrib><creatorcontrib>Savoye, E.D.</creatorcontrib><title>Integrated electronic shutter for back-illuminated charge-coupled devices</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n/sup +/ shutter drain placed in the vertical channel stop regions and stepped p-type buried layers formed by a high-energy implantation (1.0-1.5 MeV) located between the CCD n-type buried channel the and p substrate. These structures create electric fields that direct the photoelectrons to either the CCD detection region or the n/sup +/ shutter drain. The ratio of photons detected with the shutter open to photons detected with the shutter closed has been measured to be greater than 75000 for wavelengths below 540 nm. The corresponding shutter rise and fall times are less than 55 ns.< ></description><subject>Applied sciences</subject><subject>Charge coupled devices</subject><subject>Charge transfer devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Force sensors</subject><subject>High speed optical techniques</subject><subject>Integrated optics</subject><subject>Jamming</subject><subject>Optical arrays</subject><subject>Optical devices</subject><subject>Photodetectors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solid state circuits</subject><subject>Wavelength measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAQhoMouK4evHrqQQQPXfPVJD2K-LGw4EXPJUknu9Fsuyap4L-32mVPw8s88zC8CF0SvCAE13dELCgRnIojNCNVJctacHGMZhgTVdZMsVN0ltLHGAXndIaWyy7DOuoMbQEBbI59522RNkPOEAvXx8Jo-1n6EIat7_45u9FxDaXth10YYwvf3kI6RydOhwQX-zlH70-Pbw8v5er1eflwvyotwyKX1shKttpQY6iQFoxzwtaqJUJJB5Jx2o6IERXj47tOY1wprWrDJKN1S2o2RzeTdxf7rwFSbrY-WQhBd9APqaGKS8UVH8HbCbSxTymCa3bRb3X8aQhu_spqiGimskb2ei_Vyergou6sT4cDrrCgFR2xqwnzAHDY7h2_YbJxlg</recordid><startdate>19930701</startdate><enddate>19930701</enddate><creator>Reich, R.K.</creator><creator>Mountain, R.W.</creator><creator>McGonagle, W.H.</creator><creator>Huang, J.C.-M.</creator><creator>Twichell, J.C.</creator><creator>Kosicki, B.B.</creator><creator>Savoye, E.D.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19930701</creationdate><title>Integrated electronic shutter for back-illuminated charge-coupled devices</title><author>Reich, R.K. ; Mountain, R.W. ; McGonagle, W.H. ; Huang, J.C.-M. ; Twichell, J.C. ; Kosicki, B.B. ; Savoye, E.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-cb757dab2bb267cebff6c98d1687fe7342dcb7b6534938fa0058a89b37329d193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Charge coupled devices</topic><topic>Charge transfer devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Force sensors</topic><topic>High speed optical techniques</topic><topic>Integrated optics</topic><topic>Jamming</topic><topic>Optical arrays</topic><topic>Optical devices</topic><topic>Photodetectors</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid state circuits</topic><topic>Wavelength measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Reich, R.K.</creatorcontrib><creatorcontrib>Mountain, R.W.</creatorcontrib><creatorcontrib>McGonagle, W.H.</creatorcontrib><creatorcontrib>Huang, J.C.-M.</creatorcontrib><creatorcontrib>Twichell, J.C.</creatorcontrib><creatorcontrib>Kosicki, B.B.</creatorcontrib><creatorcontrib>Savoye, E.D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Reich, R.K.</au><au>Mountain, R.W.</au><au>McGonagle, W.H.</au><au>Huang, J.C.-M.</au><au>Twichell, J.C.</au><au>Kosicki, B.B.</au><au>Savoye, E.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Integrated electronic shutter for back-illuminated charge-coupled devices</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1993-07-01</date><risdate>1993</risdate><volume>40</volume><issue>7</issue><spage>1231</spage><epage>1237</epage><pages>1231-1237</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n/sup +/ shutter drain placed in the vertical channel stop regions and stepped p-type buried layers formed by a high-energy implantation (1.0-1.5 MeV) located between the CCD n-type buried channel the and p substrate. These structures create electric fields that direct the photoelectrons to either the CCD detection region or the n/sup +/ shutter drain. The ratio of photons detected with the shutter open to photons detected with the shutter closed has been measured to be greater than 75000 for wavelengths below 540 nm. The corresponding shutter rise and fall times are less than 55 ns.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.216426</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1993-07, Vol.40 (7), p.1231-1237 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_16_216426 |
| source | IEEE Xplore |
| subjects | Applied sciences Charge coupled devices Charge transfer devices Electronics Exact sciences and technology Force sensors High speed optical techniques Integrated optics Jamming Optical arrays Optical devices Photodetectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid state circuits Wavelength measurement |
| title | Integrated electronic shutter for back-illuminated charge-coupled devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T18%3A11%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Integrated%20electronic%20shutter%20for%20back-illuminated%20charge-coupled%20devices&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Reich,%20R.K.&rft.date=1993-07-01&rft.volume=40&rft.issue=7&rft.spage=1231&rft.epage=1237&rft.pages=1231-1237&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.216426&rft_dat=%3Cproquest_RIE%3E28478484%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28478484&rft_id=info:pmid/&rft_ieee_id=216426&rfr_iscdi=true |