0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology

Damage-free, dry-etched 0.25- mu m T-shape gate pseudomorphic InGaAs channel HEMTs have been demonstrated. A Freon-12-based discharge was used in either electron cyclotron resonance (ECR) or reactive ion etching (RIE) systems to perform the gate recess process. Etching selectivity of more than 200 w...

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Veröffentlicht in:	IEEE transactions on electron devices 1992-12, Vol.39 (12), p.2701-2706
Hauptverfasser:	Ren, F., Pearton, S.J., Abernathy, C.R., Wu, C.S., Hu, M., Pao, C.-K., Wang, D.C., Wen, C.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cyclotrons Dry etching Electronics Electrons Exact sciences and technology Gallium arsenide HEMTs Indium gallium arsenide MODFETs PHEMTs Resonance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Voltage
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