Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current
It is shown that measurements of the forward and reverse current in the gated drain-substrate diode of a MOSFET in accumulation, before and after stress, provide a sensitive means of characterizing hot-electron-induced degradation. Measurements on this diode under forward and reverse bias at tempera...
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Veröffentlicht in: | IEEE transactions on electron devices 1990-06, Vol.37 (6), p.1467-1476 |
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