Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current

It is shown that measurements of the forward and reverse current in the gated drain-substrate diode of a MOSFET in accumulation, before and after stress, provide a sensitive means of characterizing hot-electron-induced degradation. Measurements on this diode under forward and reverse bias at tempera...

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Veröffentlicht in:IEEE transactions on electron devices 1990-06, Vol.37 (6), p.1467-1476
Hauptverfasser: Acovic, A., Dutoit, M., Ilegems, M.
Format: Artikel
Sprache:eng
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