Fitting of rocking curves from ion-implanted semiconductors

A simple fitting procedure is presented for the analysis of the strain profile in semiconductors; it has been applied to samples of ion‐implanted silicon. The calculated strain profiles for some experimental rocking curves are compared with the simulated dopant‐concentration profiles and the energy profiles. A two‐sided Gaussian has been shown to produce an adequate fit to the strain profile in ion‐implanted semiconductors. This procedure reduces the number of refinable parameters to only four and is favoured over changing the strain distribution as a function of depth in a rapid uncorrelated way. The error between the measured and calculated rocking curves has been analysed as a function of the Gaussian parameters. Besides one sharp global minimum, many local minima exist. It is shown that smoothing of the rocking curves with a triangular shape results in a reduction of the number of local minima.