Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

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Veröffentlicht in:Physical review letters 2024-07, Vol.133 (3), Article 036202
Hauptverfasser: Shi, Shu, Cao, Tengfei, Xi, Haolong, Niu, Jiangzhen, Jing, Xixiang, Su, Hanxin, Yu, Xiaojiang, Yang, Ping, Wu, Yichen, Yan, Xiaobing, Tian, He, Tsymbal, Evgeny Y., Chen, Jingsheng
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container_title Physical review letters
container_volume 133
creator Shi, Shu
Cao, Tengfei
Xi, Haolong
Niu, Jiangzhen
Jing, Xixiang
Su, Hanxin
Yu, Xiaojiang
Yang, Ping
Wu, Yichen
Yan, Xiaobing
Tian, He
Tsymbal, Evgeny Y.
Chen, Jingsheng
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doi_str_mv 10.1103/PhysRevLett.133.036202
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1103_PhysRevLett_133_036202</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1103_PhysRevLett_133_036202</sourcerecordid><originalsourceid>FETCH-LOGICAL-c132t-dcaf2ed8ec95349195d7ce9c00376f653f7ec897852038d3a83bc627658397e23</originalsourceid><addsrcrecordid>eNpN0M1KAzEUhuEgCtbqLUhuYMaTnE5-llKsLRRatLpwM6SZk05k2koyCPXqrdaFq3f38fEwdiugFALwbtke8hN9zqnvS4FYAioJ8owNBGhbaCFG52wAgKKwAPqSXeX8DgBCKjNgr8-9W8cufsXdhvct8QmltKeOfJ-i58vWZeL7wKeBQ1nxt_SbBZd81cYdn8Rum_n6wMetSxviq-R2OVC6ZhfBdZlu_jpkL5OH1XhazBePs_H9vPACZV803gVJjSFvKxxZYatGe7L--FaroCoMmryx2lQS0DToDK69klpVBq0miUOmTrs-7XNOFOqPFLcuHWoB9Y9O_U-nPurUJx38BppdWQg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer</title><source>American Physical Society Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Shi, Shu ; Cao, Tengfei ; Xi, Haolong ; Niu, Jiangzhen ; Jing, Xixiang ; Su, Hanxin ; Yu, Xiaojiang ; Yang, Ping ; Wu, Yichen ; Yan, Xiaobing ; Tian, He ; Tsymbal, Evgeny Y. ; Chen, Jingsheng</creator><creatorcontrib>Shi, Shu ; Cao, Tengfei ; Xi, Haolong ; Niu, Jiangzhen ; Jing, Xixiang ; Su, Hanxin ; Yu, Xiaojiang ; Yang, Ping ; Wu, Yichen ; Yan, Xiaobing ; Tian, He ; Tsymbal, Evgeny Y. ; Chen, Jingsheng</creatorcontrib><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.133.036202</identifier><language>eng</language><ispartof>Physical review letters, 2024-07, Vol.133 (3), Article 036202</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c132t-dcaf2ed8ec95349195d7ce9c00376f653f7ec897852038d3a83bc627658397e23</cites><orcidid>0000-0002-3266-515X ; 0000-0002-7044-6417 ; 0000-0003-3188-2803 ; 0000-0003-2108-3100</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2863,2864,27901,27902</link.rule.ids></links><search><creatorcontrib>Shi, Shu</creatorcontrib><creatorcontrib>Cao, Tengfei</creatorcontrib><creatorcontrib>Xi, Haolong</creatorcontrib><creatorcontrib>Niu, Jiangzhen</creatorcontrib><creatorcontrib>Jing, Xixiang</creatorcontrib><creatorcontrib>Su, Hanxin</creatorcontrib><creatorcontrib>Yu, Xiaojiang</creatorcontrib><creatorcontrib>Yang, Ping</creatorcontrib><creatorcontrib>Wu, Yichen</creatorcontrib><creatorcontrib>Yan, Xiaobing</creatorcontrib><creatorcontrib>Tian, He</creatorcontrib><creatorcontrib>Tsymbal, Evgeny Y.</creatorcontrib><creatorcontrib>Chen, Jingsheng</creatorcontrib><title>Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer</title><title>Physical review letters</title><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpN0M1KAzEUhuEgCtbqLUhuYMaTnE5-llKsLRRatLpwM6SZk05k2koyCPXqrdaFq3f38fEwdiugFALwbtke8hN9zqnvS4FYAioJ8owNBGhbaCFG52wAgKKwAPqSXeX8DgBCKjNgr8-9W8cufsXdhvct8QmltKeOfJ-i58vWZeL7wKeBQ1nxt_SbBZd81cYdn8Rum_n6wMetSxviq-R2OVC6ZhfBdZlu_jpkL5OH1XhazBePs_H9vPACZV803gVJjSFvKxxZYatGe7L--FaroCoMmryx2lQS0DToDK69klpVBq0miUOmTrs-7XNOFOqPFLcuHWoB9Y9O_U-nPurUJx38BppdWQg</recordid><startdate>20240718</startdate><enddate>20240718</enddate><creator>Shi, Shu</creator><creator>Cao, Tengfei</creator><creator>Xi, Haolong</creator><creator>Niu, Jiangzhen</creator><creator>Jing, Xixiang</creator><creator>Su, Hanxin</creator><creator>Yu, Xiaojiang</creator><creator>Yang, Ping</creator><creator>Wu, Yichen</creator><creator>Yan, Xiaobing</creator><creator>Tian, He</creator><creator>Tsymbal, Evgeny Y.</creator><creator>Chen, Jingsheng</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3266-515X</orcidid><orcidid>https://orcid.org/0000-0002-7044-6417</orcidid><orcidid>https://orcid.org/0000-0003-3188-2803</orcidid><orcidid>https://orcid.org/0000-0003-2108-3100</orcidid></search><sort><creationdate>20240718</creationdate><title>Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer</title><author>Shi, Shu ; Cao, Tengfei ; Xi, Haolong ; Niu, Jiangzhen ; Jing, Xixiang ; Su, Hanxin ; Yu, Xiaojiang ; Yang, Ping ; Wu, Yichen ; Yan, Xiaobing ; Tian, He ; Tsymbal, Evgeny Y. ; Chen, Jingsheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c132t-dcaf2ed8ec95349195d7ce9c00376f653f7ec897852038d3a83bc627658397e23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shi, Shu</creatorcontrib><creatorcontrib>Cao, Tengfei</creatorcontrib><creatorcontrib>Xi, Haolong</creatorcontrib><creatorcontrib>Niu, Jiangzhen</creatorcontrib><creatorcontrib>Jing, Xixiang</creatorcontrib><creatorcontrib>Su, Hanxin</creatorcontrib><creatorcontrib>Yu, Xiaojiang</creatorcontrib><creatorcontrib>Yang, Ping</creatorcontrib><creatorcontrib>Wu, Yichen</creatorcontrib><creatorcontrib>Yan, Xiaobing</creatorcontrib><creatorcontrib>Tian, He</creatorcontrib><creatorcontrib>Tsymbal, Evgeny Y.</creatorcontrib><creatorcontrib>Chen, Jingsheng</creatorcontrib><collection>CrossRef</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shi, Shu</au><au>Cao, Tengfei</au><au>Xi, Haolong</au><au>Niu, Jiangzhen</au><au>Jing, Xixiang</au><au>Su, Hanxin</au><au>Yu, Xiaojiang</au><au>Yang, Ping</au><au>Wu, Yichen</au><au>Yan, Xiaobing</au><au>Tian, He</au><au>Tsymbal, Evgeny Y.</au><au>Chen, Jingsheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer</atitle><jtitle>Physical review letters</jtitle><date>2024-07-18</date><risdate>2024</risdate><volume>133</volume><issue>3</issue><artnum>036202</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><doi>10.1103/PhysRevLett.133.036202</doi><orcidid>https://orcid.org/0000-0002-3266-515X</orcidid><orcidid>https://orcid.org/0000-0002-7044-6417</orcidid><orcidid>https://orcid.org/0000-0003-3188-2803</orcidid><orcidid>https://orcid.org/0000-0003-2108-3100</orcidid></addata></record>
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title Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T14%3A38%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stabilizing%20the%20Ferroelectric%20Phase%20of%20Hf%200.5%20Zr%200.5%20O%202%20Thin%20Films%20by%20Charge%20Transfer&rft.jtitle=Physical%20review%20letters&rft.au=Shi,%20Shu&rft.date=2024-07-18&rft.volume=133&rft.issue=3&rft.artnum=036202&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.133.036202&rft_dat=%3Ccrossref%3E10_1103_PhysRevLett_133_036202%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true