Efficient molecular dynamics scheme for the calculation of dopant profiles due to ion implantation

We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several methods for reducing the computational overhead, plus a rare event algorithm that allows statistically reliable results to b...

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Veröffentlicht in:	Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, 1998-06, Vol.57 (6), p.7278-7287
Hauptverfasser:	Beardmore, Keith M., Grønbech-Jensen, Niels
Format:	Artikel
Sprache:	eng
Schlagworte:	BEAM PROFILES CRYSTALLIZATION ION IMPLANTATION IRRADIATION MOLECULAR DYNAMICS METHOD PHYSICS SILICON
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