Charge state switching of the divacancy defect in 4 H -SiC

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Veröffentlicht in:	Physical review. B 2018-12, Vol.98 (21), Article 214107
Hauptverfasser:	Beste, Ariana, Taylor, DeCarlos E., Golter, D. Andrew, Lai, Chih W.
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Sprache:	eng
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title	Charge state switching of the divacancy defect in 4 H -SiC
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