Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump–terahertz probe measurements
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2010-01, Vol.81 (3), Article 035201 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 81 |
| creator | Hebling, János Hoffmann, Matthias C. Hwang, Harold Y. Yeh, Ka-Lo Nelson, Keith A. |
| description | |
| doi_str_mv | 10.1103/PhysRevB.81.035201 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (3), Article 035201 |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_crossref_primary_10_1103_PhysRevB_81_035201 |
| source | American Physical Society Journals |
| title | Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump–terahertz probe measurements |
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