Electron mobility in Gaussian heavily doped ZnO surface quantum wells
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2008-03, Vol.77 (12), Article 125326 |
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| container_issue | 12 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 77 |
| creator | Quang, Doan Nhat Tuan, Le Tien, Nguyen Thanh |
| description | |
| doi_str_mv | 10.1103/PhysRevB.77.125326 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2008-03, Vol.77 (12), Article 125326 |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_crossref_primary_10_1103_PhysRevB_77_125326 |
| source | American Physical Society |
| title | Electron mobility in Gaussian heavily doped ZnO surface quantum wells |
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