Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field

Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2007-07, Vol.76 (4), Article 045111
Hauptverfasser: Sakai, Masatoshi, Sakuma, Hirotaka, Ito, Yuya, Saito, Akinobu, Nakamura, Masakazu, Kudo, Kazuhiro
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 4
container_start_page
container_title Physical review. B, Condensed matter and materials physics
container_volume 76
creator Sakai, Masatoshi
Sakuma, Hirotaka
Ito, Yuya
Saito, Akinobu
Nakamura, Masakazu
Kudo, Kazuhiro
description
doi_str_mv 10.1103/PhysRevB.76.045111
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1103_PhysRevB_76_045111</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1103_PhysRevB_76_045111</sourcerecordid><originalsourceid>FETCH-LOGICAL-c313t-7b1e3617c1ab6ea82445b4135defb20da80ad0a280c461adcf7ae00fcb222b3c3</originalsourceid><addsrcrecordid>eNo1kMtKAzEYhQdRsFZfwFWW7SI1fzK3LtvaqlC8MYK74c_NRqcdSaIwj-BbO6W6Ot_ZnANfklwCmwAwcfW46cKz-Z5PinzC0gwAjpIBZBmjXGSvxz2zaUkZcDhNzkJ4ZwzSacoHyc9sK91n26An1plGU2OtUZFEj7vgQmw9URv0qKLxfXUqkNaS0Xx5XdGqWo1H1eL-aUyU70LEJhDcabI1PdLGfRii2p3-UtG1O-L2ZDSRHUHyhtEQ0_RP3qnD83lyYvsFc_GXw-RltawWt3T9cHO3mK2pEiAiLSQYkUOhAGVusORpmskURKaNlZxpLBlqhrxkKs0BtbIFGsaskpxzKZQYJvywq3wbgje2_vRui76rgdV7mfW_zLrI64NM8Qul4Wv-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field</title><source>American Physical Society Journals</source><creator>Sakai, Masatoshi ; Sakuma, Hirotaka ; Ito, Yuya ; Saito, Akinobu ; Nakamura, Masakazu ; Kudo, Kazuhiro</creator><creatorcontrib>Sakai, Masatoshi ; Sakuma, Hirotaka ; Ito, Yuya ; Saito, Akinobu ; Nakamura, Masakazu ; Kudo, Kazuhiro</creatorcontrib><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.76.045111</identifier><language>eng</language><ispartof>Physical review. B, Condensed matter and materials physics, 2007-07, Vol.76 (4), Article 045111</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c313t-7b1e3617c1ab6ea82445b4135defb20da80ad0a280c461adcf7ae00fcb222b3c3</citedby><cites>FETCH-LOGICAL-c313t-7b1e3617c1ab6ea82445b4135defb20da80ad0a280c461adcf7ae00fcb222b3c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids></links><search><creatorcontrib>Sakai, Masatoshi</creatorcontrib><creatorcontrib>Sakuma, Hirotaka</creatorcontrib><creatorcontrib>Ito, Yuya</creatorcontrib><creatorcontrib>Saito, Akinobu</creatorcontrib><creatorcontrib>Nakamura, Masakazu</creatorcontrib><creatorcontrib>Kudo, Kazuhiro</creatorcontrib><title>Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field</title><title>Physical review. B, Condensed matter and materials physics</title><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNo1kMtKAzEYhQdRsFZfwFWW7SI1fzK3LtvaqlC8MYK74c_NRqcdSaIwj-BbO6W6Ot_ZnANfklwCmwAwcfW46cKz-Z5PinzC0gwAjpIBZBmjXGSvxz2zaUkZcDhNzkJ4ZwzSacoHyc9sK91n26An1plGU2OtUZFEj7vgQmw9URv0qKLxfXUqkNaS0Xx5XdGqWo1H1eL-aUyU70LEJhDcabI1PdLGfRii2p3-UtG1O-L2ZDSRHUHyhtEQ0_RP3qnD83lyYvsFc_GXw-RltawWt3T9cHO3mK2pEiAiLSQYkUOhAGVusORpmskURKaNlZxpLBlqhrxkKs0BtbIFGsaskpxzKZQYJvywq3wbgje2_vRui76rgdV7mfW_zLrI64NM8Qul4Wv-</recordid><startdate>20070718</startdate><enddate>20070718</enddate><creator>Sakai, Masatoshi</creator><creator>Sakuma, Hirotaka</creator><creator>Ito, Yuya</creator><creator>Saito, Akinobu</creator><creator>Nakamura, Masakazu</creator><creator>Kudo, Kazuhiro</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070718</creationdate><title>Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field</title><author>Sakai, Masatoshi ; Sakuma, Hirotaka ; Ito, Yuya ; Saito, Akinobu ; Nakamura, Masakazu ; Kudo, Kazuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-7b1e3617c1ab6ea82445b4135defb20da80ad0a280c461adcf7ae00fcb222b3c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Sakai, Masatoshi</creatorcontrib><creatorcontrib>Sakuma, Hirotaka</creatorcontrib><creatorcontrib>Ito, Yuya</creatorcontrib><creatorcontrib>Saito, Akinobu</creatorcontrib><creatorcontrib>Nakamura, Masakazu</creatorcontrib><creatorcontrib>Kudo, Kazuhiro</creatorcontrib><collection>CrossRef</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sakai, Masatoshi</au><au>Sakuma, Hirotaka</au><au>Ito, Yuya</au><au>Saito, Akinobu</au><au>Nakamura, Masakazu</au><au>Kudo, Kazuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2007-07-18</date><risdate>2007</risdate><volume>76</volume><issue>4</issue><artnum>045111</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><doi>10.1103/PhysRevB.76.045111</doi></addata></record>
fulltext fulltext
identifier ISSN: 1098-0121
ispartof Physical review. B, Condensed matter and materials physics, 2007-07, Vol.76 (4), Article 045111
issn 1098-0121
1550-235X
language eng
recordid cdi_crossref_primary_10_1103_PhysRevB_76_045111
source American Physical Society Journals
title Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T05%3A54%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ambipolar%20field-effect%20transistor%20characteristics%20of%20(BEDT-TTF)(TCNQ)%20crystals%20and%20metal-like%20conduction%20induced%20by%20a%20gate%20electric%20field&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Sakai,%20Masatoshi&rft.date=2007-07-18&rft.volume=76&rft.issue=4&rft.artnum=045111&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.76.045111&rft_dat=%3Ccrossref%3E10_1103_PhysRevB_76_045111%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true