Shape transition during epitaxial growth of InAs quantum dots on GaAs ( 001 ) : Theory and experiment
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-05, Vol.73 (20), Article 205347 |
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| container_issue | 20 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 73 |
| creator | Kratzer, P. Liu, Q. K. K. Acosta-Diaz, P. Manzano, C. Costantini, G. Songmuang, R. Rastelli, A. Schmidt, O. G. Kern, K. |
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| doi_str_mv | 10.1103/PhysRevB.73.205347 |
| format | Article |
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| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2006-05, Vol.73 (20), Article 205347 |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_crossref_primary_10_1103_PhysRevB_73_205347 |
| source | American Physical Society Journals |
| title | Shape transition during epitaxial growth of InAs quantum dots on GaAs ( 001 ) : Theory and experiment |
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