Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems

Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 2000-04, Vol.61 (16), p.10820-10826
Hauptverfasser: Bogusławski, P., Rapcewicz, Krzysztof, Bernholc, J. J.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 10826
container_issue 16
container_start_page 10820
container_title Physical review. B, Condensed matter
container_volume 61
creator Bogusławski, P.
Rapcewicz, Krzysztof
Bernholc, J. J.
description
doi_str_mv 10.1103/PhysRevB.61.10820
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1103_PhysRevB_61_10820</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1103_PhysRevB_61_10820</sourcerecordid><originalsourceid>FETCH-LOGICAL-c286t-14c920f03b6c6a0fcd73f8873059954aa220fb4233c944cb02ec8883ceb720d93</originalsourceid><addsrcrecordid>eNo1kMtOwzAQRS0EEqHwAez8AaSdsRPHXpYKSqWqIB7ryHHtYpQmVWwQEeLfSaHMYl736i4OIZcIY0Tgk4fXPjzaj-uxwDGCZHBEEgSVp7xQ-TFJAAVPUTJ1Ss5CeIOhmFAJsU_vndPG0mA3nd3o6NuG6mZNfRPtQYm68rWPPW0dndaryVyvrujQJotmWPbm_Xc46NcQi9_U7nzUn17XNPQh2m04JydO18FeHOaIvNzePM_u0uX9fDGbLlPDpIgpZkYxcMArYYQGZ9YFd1IWHHKl8kxrNqhVxjg3KstMBcwaKSU3tioYrBUfEfzLNV0bQmdduev8Vnd9iVDuOZX_nEqB5S8n_gN2c1vt</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems</title><source>American Physical Society Journals</source><creator>Bogusławski, P. ; Rapcewicz, Krzysztof ; Bernholc, J. J.</creator><creatorcontrib>Bogusławski, P. ; Rapcewicz, Krzysztof ; Bernholc, J. J.</creatorcontrib><identifier>ISSN: 0163-1829</identifier><identifier>EISSN: 1095-3795</identifier><identifier>DOI: 10.1103/PhysRevB.61.10820</identifier><language>eng</language><ispartof>Physical review. B, Condensed matter, 2000-04, Vol.61 (16), p.10820-10826</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c286t-14c920f03b6c6a0fcd73f8873059954aa220fb4233c944cb02ec8883ceb720d93</citedby><cites>FETCH-LOGICAL-c286t-14c920f03b6c6a0fcd73f8873059954aa220fb4233c944cb02ec8883ceb720d93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids></links><search><creatorcontrib>Bogusławski, P.</creatorcontrib><creatorcontrib>Rapcewicz, Krzysztof</creatorcontrib><creatorcontrib>Bernholc, J. J.</creatorcontrib><title>Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems</title><title>Physical review. B, Condensed matter</title><issn>0163-1829</issn><issn>1095-3795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNo1kMtOwzAQRS0EEqHwAez8AaSdsRPHXpYKSqWqIB7ryHHtYpQmVWwQEeLfSaHMYl736i4OIZcIY0Tgk4fXPjzaj-uxwDGCZHBEEgSVp7xQ-TFJAAVPUTJ1Ss5CeIOhmFAJsU_vndPG0mA3nd3o6NuG6mZNfRPtQYm68rWPPW0dndaryVyvrujQJotmWPbm_Xc46NcQi9_U7nzUn17XNPQh2m04JydO18FeHOaIvNzePM_u0uX9fDGbLlPDpIgpZkYxcMArYYQGZ9YFd1IWHHKl8kxrNqhVxjg3KstMBcwaKSU3tioYrBUfEfzLNV0bQmdduev8Vnd9iVDuOZX_nEqB5S8n_gN2c1vt</recordid><startdate>20000415</startdate><enddate>20000415</enddate><creator>Bogusławski, P.</creator><creator>Rapcewicz, Krzysztof</creator><creator>Bernholc, J. J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000415</creationdate><title>Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems</title><author>Bogusławski, P. ; Rapcewicz, Krzysztof ; Bernholc, J. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-14c920f03b6c6a0fcd73f8873059954aa220fb4233c944cb02ec8883ceb720d93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bogusławski, P.</creatorcontrib><creatorcontrib>Rapcewicz, Krzysztof</creatorcontrib><creatorcontrib>Bernholc, J. J.</creatorcontrib><collection>CrossRef</collection><jtitle>Physical review. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bogusławski, P.</au><au>Rapcewicz, Krzysztof</au><au>Bernholc, J. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems</atitle><jtitle>Physical review. B, Condensed matter</jtitle><date>2000-04-15</date><risdate>2000</risdate><volume>61</volume><issue>16</issue><spage>10820</spage><epage>10826</epage><pages>10820-10826</pages><issn>0163-1829</issn><eissn>1095-3795</eissn><doi>10.1103/PhysRevB.61.10820</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0163-1829
ispartof Physical review. B, Condensed matter, 2000-04, Vol.61 (16), p.10820-10826
issn 0163-1829
1095-3795
language eng
recordid cdi_crossref_primary_10_1103_PhysRevB_61_10820
source American Physical Society Journals
title Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T03%3A07%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20segregation%20and%20interface%20stability%20of%20AlN/GaN,%20GaN/InN,%20and%20AlN/InN%20%7B0001%7D%20epitaxial%20systems&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter&rft.au=Bogus%C5%82awski,%20P.&rft.date=2000-04-15&rft.volume=61&rft.issue=16&rft.spage=10820&rft.epage=10826&rft.pages=10820-10826&rft.issn=0163-1829&rft.eissn=1095-3795&rft_id=info:doi/10.1103/PhysRevB.61.10820&rft_dat=%3Ccrossref%3E10_1103_PhysRevB_61_10820%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true