Low-temperature electron-phonon interaction in Si MOSFETs
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| Veröffentlicht in: | Physical review. B, Condensed matter Condensed matter, 1998, Vol.57 (4), p.2443-2446 |
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| Sprache: | eng |
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| container_end_page | 2446 |
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| container_issue | 4 |
| container_start_page | 2443 |
| container_title | Physical review. B, Condensed matter |
| container_volume | 57 |
| creator | Zieve, R. J. Prober, D. E. Wheeler, R. G. |
| description | |
| doi_str_mv | 10.1103/PhysRevB.57.2443 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0163-1829 |
| ispartof | Physical review. B, Condensed matter, 1998, Vol.57 (4), p.2443-2446 |
| issn | 0163-1829 1095-3795 |
| language | eng |
| recordid | cdi_crossref_primary_10_1103_PhysRevB_57_2443 |
| source | American Physical Society Journals |
| title | Low-temperature electron-phonon interaction in Si MOSFETs |
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