Compositional ordering in SiGe alloy thin films

We have performed surface x-ray diffraction experiments on Si{sub 0.5}Ge{sub 0.5} films grown on Ge(001) substrates. The results for our thinnest film (eight monolayers) show the compositional order at the initial stages of growth. This ordering is observed underneath the surface (2{times}1) dimer r...

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Veröffentlicht in:	Physical Review, B: Condensed Matter B: Condensed Matter, 1998-05, Vol.57 (19), p.12410-12420
Hauptverfasser:	Whiteaker, K. L., Robinson, I. K., Van Nostrand, J. E., Cahill, D. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	DIMERS GERMANIUM ALLOYS MATERIALS SCIENCE ORDER PARAMETERS SILICON ALLOYS STRUCTURAL CHEMICAL ANALYSIS THIN FILMS X-RAY DIFFRACTION
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