Compositional ordering in SiGe alloy thin films

We have performed surface x-ray diffraction experiments on Si{sub 0.5}Ge{sub 0.5} films grown on Ge(001) substrates. The results for our thinnest film (eight monolayers) show the compositional order at the initial stages of growth. This ordering is observed underneath the surface (2{times}1) dimer r...

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Veröffentlicht in:Physical Review, B: Condensed Matter B: Condensed Matter, 1998-05, Vol.57 (19), p.12410-12420
Hauptverfasser: Whiteaker, K. L., Robinson, I. K., Van Nostrand, J. E., Cahill, D. G.
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container_end_page 12420
container_issue 19
container_start_page 12410
container_title Physical Review, B: Condensed Matter
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creator Whiteaker, K. L.
Robinson, I. K.
Van Nostrand, J. E.
Cahill, D. G.
description We have performed surface x-ray diffraction experiments on Si{sub 0.5}Ge{sub 0.5} films grown on Ge(001) substrates. The results for our thinnest film (eight monolayers) show the compositional order at the initial stages of growth. This ordering is observed underneath the surface (2{times}1) dimer reconstruction, and was previously predicted by calculations on the equilibrium alloy surface. This initial surface compositional ordering is also consistent with the ultimate structure for the bulk of these films. Measurements from thicker alloy films show an increase in the average order parameter with increasing thickness, but then a decrease with the thickest film of 1000 {Angstrom}. {copyright} {ital 1998} {ital The American Physical Society}
doi_str_mv 10.1103/PhysRevB.57.12410
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source American Physical Society Journals
subjects DIMERS
GERMANIUM ALLOYS
MATERIALS SCIENCE
ORDER PARAMETERS
SILICON ALLOYS
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS
X-RAY DIFFRACTION
title Compositional ordering in SiGe alloy thin films
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