Atomic-structure characterization of a H:GaAs(110) surface by time-of-flight ion-scattering spectrometry

We have used ion-scattering spectrometry with time-of-flight analysis (TOF) to study the atomic structure of a GaAs(110) surface exposed to atomic hydrogen. The TOF spectra of ions plus neutrals acquired for 6 keV Ne{sup +} backscattering from both As and Ga top-layer atoms show a strong dependence...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physical Review, B: Condensed Matter B: Condensed Matter, 1997-08, Vol.56 (7), p.4194-4202
Hauptverfasser:	Gayone, J. E., Pregliasco, R. G., Sánchez, E. A., Grizzi, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHEMISORPTION CRYSTAL STRUCTURE GALLIUM ARSENIDES HYDROGEN ION BEAMS ION COLLISIONS ION SPECTROSCOPY KEV RANGE 01-10 NEON IONS PHYSICS RADIATION EFFECTS SURFACE PROPERTIES TIME-OF-FLIGHT METHOD
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!