Si 2 p core-level chemical shifts at the H/Si(111)-(1×1) surface

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1994-09, Vol.50 (11), p.8102-8105
Hauptverfasser: Blase, X., da Silva, Antônio J. R., Zhu, Xuejun, Louie, Steven G.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 8105
container_issue 11
container_start_page 8102
container_title Physical review. B, Condensed matter
container_volume 50
creator Blase, X.
da Silva, Antônio J. R.
Zhu, Xuejun
Louie, Steven G.
description
doi_str_mv 10.1103/PhysRevB.50.8102
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1103_PhysRevB_50_8102</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1103_PhysRevB_50_8102</sourcerecordid><originalsourceid>FETCH-LOGICAL-c882-4953fdadb28dc82565c001e1ccff521a3906f45b7a730fc2ad074e2d792cd353</originalsourceid><addsrcrecordid>eNo10L1OwzAYhWELgUQo7Iwe28Hp99lxYo-lAopUCUTYLdc_SlCqVnao1CvhgrgxqICzvNsZHkJuEUpEEPOX7phfw-GulFAqBH5GCgQtmWi0PCcFYC0YKq4vyVXO7_AzXuuCLNqecrqnbpcCG8IhDNR1Yds7O9Dc9XHM1I507AJdzdt-iogzNsWvT5zR_JGideGaXEQ75HDz1wlpH-7fliu2fn58Wi7WzCnFWaWliN76DVfeKS5r6QAwoHMxSo5WaKhjJTeNbQREx62HpgrcN5o7L6SYEPh9dWmXcwrR7FO_teloEMwJwPwDGAnmBCC-Aek3TcI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Si 2 p core-level chemical shifts at the H/Si(111)-(1×1) surface</title><source>American Physical Society Journals</source><creator>Blase, X. ; da Silva, Antônio J. R. ; Zhu, Xuejun ; Louie, Steven G.</creator><creatorcontrib>Blase, X. ; da Silva, Antônio J. R. ; Zhu, Xuejun ; Louie, Steven G.</creatorcontrib><identifier>ISSN: 0163-1829</identifier><identifier>EISSN: 1095-3795</identifier><identifier>DOI: 10.1103/PhysRevB.50.8102</identifier><language>eng</language><ispartof>Physical review. B, Condensed matter, 1994-09, Vol.50 (11), p.8102-8105</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c882-4953fdadb28dc82565c001e1ccff521a3906f45b7a730fc2ad074e2d792cd353</citedby><cites>FETCH-LOGICAL-c882-4953fdadb28dc82565c001e1ccff521a3906f45b7a730fc2ad074e2d792cd353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2862,2863,27903,27904</link.rule.ids></links><search><creatorcontrib>Blase, X.</creatorcontrib><creatorcontrib>da Silva, Antônio J. R.</creatorcontrib><creatorcontrib>Zhu, Xuejun</creatorcontrib><creatorcontrib>Louie, Steven G.</creatorcontrib><title>Si 2 p core-level chemical shifts at the H/Si(111)-(1×1) surface</title><title>Physical review. B, Condensed matter</title><issn>0163-1829</issn><issn>1095-3795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo10L1OwzAYhWELgUQo7Iwe28Hp99lxYo-lAopUCUTYLdc_SlCqVnao1CvhgrgxqICzvNsZHkJuEUpEEPOX7phfw-GulFAqBH5GCgQtmWi0PCcFYC0YKq4vyVXO7_AzXuuCLNqecrqnbpcCG8IhDNR1Yds7O9Dc9XHM1I507AJdzdt-iogzNsWvT5zR_JGideGaXEQ75HDz1wlpH-7fliu2fn58Wi7WzCnFWaWliN76DVfeKS5r6QAwoHMxSo5WaKhjJTeNbQREx62HpgrcN5o7L6SYEPh9dWmXcwrR7FO_teloEMwJwPwDGAnmBCC-Aek3TcI</recordid><startdate>199409</startdate><enddate>199409</enddate><creator>Blase, X.</creator><creator>da Silva, Antônio J. R.</creator><creator>Zhu, Xuejun</creator><creator>Louie, Steven G.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199409</creationdate><title>Si 2 p core-level chemical shifts at the H/Si(111)-(1×1) surface</title><author>Blase, X. ; da Silva, Antônio J. R. ; Zhu, Xuejun ; Louie, Steven G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c882-4953fdadb28dc82565c001e1ccff521a3906f45b7a730fc2ad074e2d792cd353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Blase, X.</creatorcontrib><creatorcontrib>da Silva, Antônio J. R.</creatorcontrib><creatorcontrib>Zhu, Xuejun</creatorcontrib><creatorcontrib>Louie, Steven G.</creatorcontrib><collection>CrossRef</collection><jtitle>Physical review. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Blase, X.</au><au>da Silva, Antônio J. R.</au><au>Zhu, Xuejun</au><au>Louie, Steven G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Si 2 p core-level chemical shifts at the H/Si(111)-(1×1) surface</atitle><jtitle>Physical review. B, Condensed matter</jtitle><date>1994-09</date><risdate>1994</risdate><volume>50</volume><issue>11</issue><spage>8102</spage><epage>8105</epage><pages>8102-8105</pages><issn>0163-1829</issn><eissn>1095-3795</eissn><doi>10.1103/PhysRevB.50.8102</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0163-1829
ispartof Physical review. B, Condensed matter, 1994-09, Vol.50 (11), p.8102-8105
issn 0163-1829
1095-3795
language eng
recordid cdi_crossref_primary_10_1103_PhysRevB_50_8102
source American Physical Society Journals
title Si 2 p core-level chemical shifts at the H/Si(111)-(1×1) surface
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T05%3A24%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Si%202%20p%20core-level%20chemical%20shifts%20at%20the%20H/Si(111)-(1%C3%971)%20surface&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter&rft.au=Blase,%20X.&rft.date=1994-09&rft.volume=50&rft.issue=11&rft.spage=8102&rft.epage=8105&rft.pages=8102-8105&rft.issn=0163-1829&rft.eissn=1095-3795&rft_id=info:doi/10.1103/PhysRevB.50.8102&rft_dat=%3Ccrossref%3E10_1103_PhysRevB_50_8102%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true