Stability of the EL 2 center in GaAs under electron-hole recombination conditions

Stability of the EL 2 center in GaAs under electron-hole recombination conditions

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1986-09, Vol.34 (6), p.4358-4359
Hauptverfasser: LEVINSON, M, COOMBS, C. D, KAFALAS, J. A
Format: Artikel
Sprache:eng
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Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
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container_end_page 4359
container_issue 6
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container_title Physical review. B, Condensed matter
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creator LEVINSON, M
COOMBS, C. D
KAFALAS, J. A
description
doi_str_mv 10.1103/PhysRevB.34.4358
format Article
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source American Physical Society Journals
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
title Stability of the EL 2 center in GaAs under electron-hole recombination conditions
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