Using neural network potentials to study defect formation and phonon properties of nitrogen vacancies with multiple charge states in GaN

Using neural network potentials to study defect formation and phonon properties of nitrogen vacancies with multiple charge states in GaN

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Veröffentlicht in:Physical review. B 2022-08, Vol.106 (5), Article 054108
Hauptverfasser: Shimizu, Koji, Dou, Ying, Arguelles, Elvis F., Moriya, Takumi, Minamitani, Emi, Watanabe, Satoshi
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container_issue 5
container_start_page
container_title Physical review. B
container_volume 106
creator Shimizu, Koji
Dou, Ying
Arguelles, Elvis F.
Moriya, Takumi
Minamitani, Emi
Watanabe, Satoshi
description
doi_str_mv 10.1103/PhysRevB.106.054108
format Article
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title Using neural network potentials to study defect formation and phonon properties of nitrogen vacancies with multiple charge states in GaN
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