Gating of Two-Dimensional Electron Systems in (In,Ga)As/(In,Al)As Heterostructures: The Role of Intrinsic (In,Al)As Deep Donor Defects

We present an analysis of gated (In, Ga)As/(In, Al)As heterostructures, a device platform to realize spin-orbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate the gate response of the two-dimensional electron sy...

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Veröffentlicht in:	Physical review applied 2021-12, Vol.16 (6), Article 064028
Hauptverfasser:	Prager, Michael, Trottmann, Michaela, Schmidt, Jaydean, Ebnet, Lucia, Schuh, Dieter, Bougeard, Dominique
Format:	Artikel
Sprache:	eng
Schlagworte:	Physical Sciences Physics Physics, Applied Science & Technology
Online-Zugang:	Volltext
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